HMC635

RF Amplifiers Overview

The HMC635 is a GaAs PHEMT MMIC driver amplifier die designed for operation between 18 and 40 GHz. It provides a typical gain of 19.5 dB with a noise figure of 8 dB. The device delivers an output power of +23 dBm at the 1 dB compression point (P1dB) and achieves an output third-order intercept point (OIP3) of +29 dBm. It operates from a single 5 V supply, drawing 280 mA of current. The component supports a wide operating temperature range from -55°C to +85°C and features an input return loss of 15 dB.

RF Amplifiers Feature Summary

• Utilizes GaAs PHEMT technology for high-frequency performance in the Ka-band range
• Provides high linearity with +29 dBm OIP3 and +23 dBm saturated output power
• Engineered as a bare die for flexible integration into custom RF subsystems

RF Amplifiers Applications

• VSAT communication systems requiring uplink amplification
• Point-to-point microwave radio links
• Military radar and electronic warfare applications
• Test and measurement equipment operating in the 18-40 GHz range

RF Amplifiers Procurement Notes

Verify availability status carefully as this component may be subject to limited supply or factory special order conditions. Confirm that the procurement channel accepts bare die components, as standard surface-mount packaging is not applicable. Ensure that handling procedures comply with electrostatic discharge (ESD) protection standards required for unencapsulated semiconductor dies during storage and assembly.

RF Amplifiers Selection Notes

Select the HMC635 when a compact, high-gain driver stage is needed for frequencies up to 40 GHz. This component is appropriate for designs where board space is constrained and a bare die solution is preferred over packaged ICs. Consider the thermal management requirements associated with 1.45 W power dissipation and ensure the substrate material supports efficient heat transfer for reliable long-term operation.

RF Amplifiers Part Context

This part belongs to the Analog Devices HMC series of monolithic microwave integrated circuits (MMICs). It serves as a driver amplifier within the broader portfolio of RF and microwave components. The HMC635 complements other devices in the family by providing specific high-frequency gain capabilities tailored for demanding wireless infrastructure and defense applications.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative sources.