HMC784MS8GE

RF Switches Overview

The HMC784MS8GE is a GaAs MMIC SPDT switch designed for transmit-receive applications. It operates from DC to 4 GHz with a maximum power handling of 10 Watts. The device features low insertion loss and high isolation, maintaining consistent RF performance across a supply voltage range of 3V to 8V. It utilizes a CMOS/TTL control interface requiring only 20 uA operating current. Packaged in an 8-lead MSOPG (3.1 x 3.1 x 0.97mm) surface-mount format, it supports operation between -40°C and +85°C.

RF Switches Feature Summary

• High power handling capability of 10 Watts for robust transmit-receive switching
• Low distortion performance suitable for sensitive RF signal paths
• Wide operational frequency range extending from DC to 4 GHz
• Minimal control current consumption of 20 uA for efficient power management

RF Switches Applications

• Transmit-receive switching in wireless communication systems
• RF signal routing in general purpose microwave circuits
• Antenna switching modules requiring high linearity

RF Switches Procurement Notes

Verify component status carefully as this part is classified as obsolete by the manufacturer. Confirm availability through authorized distributors or secondary market suppliers. Ensure the specific MSOPG package variant matches design requirements. Check for lead-free compliance and RoHS status if required for final assembly. Validate that the 3V to 8V supply range aligns with system power architecture.

RF Switches Selection Notes

Select this component when high power handling and low distortion are critical for SPDT switching needs up to 4 GHz. Consider the 8-lead MSOPG package for space-constrained PCB layouts. Evaluate the 3V to 8V supply flexibility against available system voltages. Compare alternative GaAs MMIC switches if higher frequencies or different power levels are required. Ensure thermal management supports the specified operating temperature range.

RF Switches Part Context

The HMC784MS8GE belongs to the Hittite series of RF switches under Analog Devices Inc. It represents a high-power single-pole double-throw solution optimized for T/R applications. The device integrates GaAs MMIC technology to deliver reliable performance in demanding RF environments. Its design focuses on minimizing signal distortion while handling significant power levels within a compact surface-mount footprint.

RF Switches Replacement Considerations

No public confirmed substitute part numbers are available for this obsolete component.