HN1D02FU,LF

$0.26

Description：DIODE ARRAY GP 80V 100MA US6
Series：-

SKU:ddcacc77874f Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

HN1D02FU,LF is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY GP 80V 100MA US6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN1D02FU,LF

Description：DIODE ARRAY GP 80V 100MA US6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：2 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：100mA
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：4 ns
Current - Reverse Leakage @ Vr：500 nA @ 80 V
Operating Temperature - Junction：125°C (Max)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：US6
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN1D02FU,LF

HN1D02FU,LF

Diode Arrays Overview

The HN1D02FU,LF is a diode silicon epitaxial planar type from Toshiba Electronic Devices & Storage Corporation. It features two cathode-common units in a US6 package. Key electrical characteristics include a maximum reverse voltage of 80 V and a peak reverse voltage of 85 V. The forward voltage reaches up to 1.20 V at 100 mA, while the total capacitance is typically 0.9 pF. The device exhibits an ultra-fast reverse recovery time with a typical value of 1.6 ns. Power dissipation is rated at 200 mW, supporting a junction temperature up to 150°C.

Diode Arrays Feature Summary

AEC-Q101 qualified for automotive reliability standards
Ultra-high speed switching capability with fast reverse recovery time
Low forward voltage operation for efficiency
Small total capacitance for high-frequency performance

Diode Arrays Applications

Ultra-high speed switching applications
Automotive electronic circuits
General purpose rectification

Diode Arrays Procurement Notes

Verify AEC-Q101 qualification status directly with Toshiba sales representatives as detailed information requires specific inquiry. Confirm environmental compliance such as RoHS compatibility through official channels before procurement. Ensure design adheres to the Toshiba Semiconductor Reliability Handbook regarding derating concepts and handling precautions to maintain product integrity under operational loads.

Diode Arrays Selection Notes

Select this component for designs requiring ultra-fast switching speeds and low capacitance. Consider the dual cathode-common configuration for space-constrained layouts. Evaluate thermal management capabilities against the 200 mW power dissipation rating. Verify that the 80 V reverse voltage rating aligns with circuit requirements. Check absolute maximum ratings carefully when using both units simultaneously or independently.

Diode Arrays Part Context

This part belongs to the Toshiba Diode Silicon Epitaxial Planar Type series. It utilizes a US6 surface mount package weighing approximately 6.8 mg. The device was commercially produced starting in May 1992. It represents a long-standing solution for high-speed switching needs within the broader portfolio of discrete semiconductor devices offered by the manufacturer.