HN1D02FU(T5L,F,T)

$0.32

Description：DIODE ARRAY GP 80V 100MA ES6
Series：-

SKU:9af59ff925c6 Category: Diode Arrays Brand: Toshiba Semiconductor and Storage

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Product introduction

HN1D02FU(T5L,F,T) is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE ARRAY GP 80V 100MA ES6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN1D02FU(T5L,F,T)

Description：DIODE ARRAY GP 80V 100MA ES6
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：2 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：100mA
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：4 ns
Current - Reverse Leakage @ Vr：500 nA @ 80 V
Operating Temperature - Junction：125°C (Max)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：ES6
Grade：-
Qualification：-

Diode Arrays datasheet and documents for HN1D02FU(T5L,F,T)

HN1D02FU(T5L,F,T)

Diode Arrays Overview

The HN1D02FU is a silicon epitaxial planar ultra-high-speed switching diode manufactured by Toshiba Electronic Devices & Storage Corporation. It features a cathode common configuration with four internal units housed in an US6 surface-mount package. The device supports a maximum reverse voltage of 80 V and a peak forward current of 300 mA per unit. Key electrical characteristics include a typical forward voltage of 0.90 V at 100 mA, a total capacitance of 0.9 pF, and a fast reverse recovery time of 1.6 ns.

Diode Arrays Feature Summary

Ultra-fast switching performance with minimal reverse recovery time for high-frequency applications
Low forward voltage drop to reduce conduction losses
Minimal total capacitance to support high-speed signal integrity
AEC-Q101 qualified for automotive reliability standards

Diode Arrays Applications

Automotive electronic systems requiring AEC-Q101 compliance
High-speed switching circuits and rectifiers
General-purpose ultra-high speed switching applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix (LF or T) to confirm the correct junction temperature rating and storage temperature range before procurement. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in the datasheet restrictions. Ensure design parameters remain within absolute maximum ratings to maintain product reliability.

Diode Arrays Selection Notes

Select this component when low forward voltage and rapid reverse recovery are critical for circuit efficiency. The cathode common structure allows for independent or simultaneous operation of the internal diodes. Verify that the operating conditions align with the specified thermal derating guidelines found in the Toshiba Semiconductor Reliability Handbook.

Diode Arrays Part Context

This part belongs to Toshiba's lineup of silicon epitaxial planar diodes designed for ultra-high-speed switching. It utilizes advanced manufacturing processes to achieve superior switching speeds compared to standard rectifiers. The US6 package provides a compact footprint suitable for modern surface-mount assembly requirements.