Diode Arrays HN2D02FUTW1T1 product image

HN2D02FUTW1T1

  • Description:DIODE SWITCH 100MA 85V SOT363
  • Series:*

SKU:41a3a40cbfa2 Category: Brand:

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HN2D02FUTW1T1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE SWITCH 100MA 85V SOT363. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for HN2D02FUTW1T1

  • Description:DIODE SWITCH 100MA 85V SOT363
  • Series:*
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:-
  • Technology:-
  • Voltage - DC Reverse (Vr) (Max):-
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:-
  • Speed:-
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for HN2D02FUTW1T1

HN2D02FUTW1T1

Diode Arrays Overview

The HN2D02FUTW1T1 is an ultra-high-speed switching diode manufactured by onsemi. It features a peak reverse voltage of 85 V and a forward current rating of 100 mA dc. The device incorporates three silicon epitaxial planar diodes within a single SC-88 (SOT-363) package. Key electrical characteristics include a maximum reverse recovery time of 3.0 ns and a diode capacitance below 2.0 pF at 1.0 MHz. Power dissipation is rated at 300 mW, with a junction temperature limit of 150 °C.

Diode Arrays Feature Summary

  • Ultra-high speed switching capability with fast reverse recovery time
  • Low parasitic capacitance for high-frequency signal integrity
  • Compact surface mount packaging designed for low power applications

Diode Arrays Applications

  • High frequency rectification circuits
  • Polarity protection in sensitive electronics
  • Free wheeling diodes in switching mode base drive circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix TW1T1 to confirm the 7-inch reel quantity of 3000 units. Ensure the component matches the SC-88 package outline CASE 419B-02. Confirm that the application environment remains within the specified thermal limits and does not exceed the maximum ratings defined in the datasheet.

Diode Arrays Selection Notes

Select this component when circuit designs require minimal reverse recovery time and low capacitance. The three-element configuration allows multiple independent diodes in a small footprint. Verify that the 80 V reverse voltage rating meets the system's peak reverse voltage requirements under all operating conditions.

Diode Arrays Part Context

This device belongs to the HN2D02FU series of ultra-high-speed switching diodes. It utilizes silicon epitaxial planar technology optimized for rapid switching performance. The product line is intended for surface mount applications where space constraints and high-speed operation are critical design factors.

Diode Arrays Replacement Considerations

Compatible substitutes include the HN2D02FU, LF variant and the HN2D02FUTW1T1G version. These alternatives share identical electrical specifications and package dimensions. Verify pinout compatibility before implementation.

Diode Arrays FAQ

What is the maximum reverse recovery time for this diode?

The maximum reverse recovery time is 3.0 ns under specified test conditions.

How many diodes are contained in the SC-88 package?

The package contains three independent silicon epitaxial planar diodes.

What is the maximum power dissipation rating?

The maximum power dissipation is 300 mW at 25°C ambient temperature.

HN2D02FUTW1T1HN2D02FUTW1T1

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