HN4D01JU(TE85L,F)

Diode Arrays Overview

The Toshiba HN4D01JU is a silicon epitaxial planar quad switching diode designed for ultra-high-speed applications. It features a maximum reverse voltage of 80V and an average forward current rating of 100mA per unit, with a total package rating of 150mA. The device achieves a typical reverse recovery time of 1.6ns and a low forward voltage of 0.92V at 100mA. Electrical characteristics include a maximum reverse current of 0.5μA at 80V and a total capacitance of 2.2pF. The component operates within a junction temperature range up to 150°C and is housed in a compact surface-mount package.

Diode Arrays Feature Summary

• Ultra-fast switching performance with a typical reverse recovery time of 1.6ns
• Low forward voltage drop of 0.92V (typical) at rated current
• Quad configuration integrating four independent switching diodes in a single package
• Minimal total capacitance of 2.2pF for high-frequency signal integrity

Diode Arrays Applications

• High-speed digital logic circuits
• Pulse generation and shaping networks
• Clamping and protection in RF signal paths
• Fast rectification in DC-DC converter output stages

Diode Arrays Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders. Cross-reference the datasheet revision date to guarantee access to the most recent reliability data and handling precautions.

Diode Arrays Selection Notes

Select this component when circuit designs require minimal propagation delay and low capacitive loading in multi-channel configurations. The quad topology reduces board space compared to discrete solutions. Evaluate thermal derating requirements carefully, as the total power dissipation limit applies to the combined units. Confirm that the 80V reverse voltage rating exceeds peak transient voltages in the target application environment.

Diode Arrays Part Context

This component belongs to Toshiba's HN series of small-signal switching diodes, engineered for rapid response in consumer electronics and industrial control systems. The HN4D01JU specifically addresses the need for compact, multi-channel fast-switching solutions. It complements other devices in the lineup by offering integrated functionality without sacrificing speed or voltage tolerance.

Diode Arrays Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements may not match the 1.6ns reverse recovery time or 2.2pF capacitance values. Verify pinout compatibility and absolute maximum ratings before integration.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

How is the forward current rated for the quad package?

The average forward current is rated at 100mA per unit, with a total package rating of 150mA.

Does the device support high-frequency operation?

Yes, it features a low total capacitance of 2.2pF and a fast reverse recovery time of 1.6ns, suitable for high-frequency applications.