HSMS-280F-TR1G

RF Diode Overview

The HSMS-280F-TR1G is a surface-mount RF Schottky barrier diode manufactured by Broadcom Limited. It features a Common Cathode configuration within a SOT-363 package. The device provides a minimum breakdown voltage of 70 V and a maximum forward voltage of 410 mV at 1 mA. Electrical specifications include a maximum reverse leakage current of 200 nA at 50 V, a typical dynamic resistance of 35 ohms at 5 mA, and a maximum capacitance of 2.0 pF at 0 V and 1 MHz.

RF Diode Feature Summary

• Optimized for high-voltage analog and digital applications
• Six-sigma quality level with low failure rate
• Dice matched in pairs and quads from adjacent wafer sites

RF Diode Applications

• High voltage rectification circuits
• Analog signal processing
• Digital switching applications

RF Diode Procurement Notes

Verify the component status as the datasheet indicates obsolescence. Confirm RoHS compliance details through official documentation before procurement. Ensure the ordering suffix matches the required tape and reel quantity for production integration.

RF Diode Selection Notes

Select this part when high breakdown voltage is required compared to lower voltage families. Consider the higher series resistance relative to other variants. Verify that the common cathode configuration aligns with the circuit topology requirements.

RF Diode Part Context

This component belongs to the HSMS-280x family of surface mount RF Schottky diodes. The series offers various configurations including single, dual, and quad versions. All devices in this family utilize the same diode chip optimized for high voltage performance.

RF Diode Replacement Considerations

Check for availability of HSMS-280L-BLKG or HSMS-280M-TR1G if alternative pinouts are acceptable. Verify electrical parameters against specific design constraints before substitution.