HSMS-281B-BLKG

RF Diode Overview

The HSMS-281B-BLKG is a surface mount RF Schottky barrier diode from the HSMS-281x series, manufactured by Broadcom Limited. It features a single diode configuration in an SOT-23 package with marking code B0. Key electrical specifications include a breakdown voltage of 20 V, a forward voltage of 400 mV at 1 mA, and a reverse leakage current of 200 nA at 20 V. The device exhibits a capacitance of 1.2 pF at 0 V and a dynamic resistance of 15 Ω at 5 mA. It operates within a junction temperature range of -65°C to 150°C and supports a maximum forward current of 1 A.

RF Diode Feature Summary

• Designed for low flicker (1/f) noise applications
• Six-sigma quality level assurance
• Low FIT (Failure in Time) rate
• Lead-free option available

RF Diode Applications

• Analog signal processing circuits
• Digital switching applications
• RF mixing and detection stages
• Signal clamping and wave shaping

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and lead-free designation if required by assembly specifications. Check for obsolescence notices as this series may have been superseded by newer generations. Ensure storage conditions adhere to moisture sensitivity levels to prevent package damage during soldering processes.

RF Diode Selection Notes

Select the HSMS-281B variant when low flicker noise performance is critical compared to standard Schottky alternatives. Compare series resistance and breakdown voltage against HSMS-280x and HSMS-282x families based on specific circuit requirements. Ensure the SOT-23 package footprint aligns with existing PCB layout constraints and automated assembly capabilities.

RF Diode Part Context

This component belongs to the HSMS-281x family of surface mount RF Schottky diodes. The series provides various configurations including single, dual, and quad versions to offer design flexibility. Manufacturing techniques ensure high matching degrees for paired devices taken from adjacent wafer sites.

RF Diode Replacement Considerations

HSMS-281E-BLKG

RF Diode FAQ

What is the typical flicker noise characteristic of the HSMS-281x series?

The HSMS-281x series is specifically designed to feature very low flicker (1/f) noise, making it suitable for sensitive analog and RF applications.

How are diodes matched in pairs and quads within this series?

Manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, ensuring the highest degree of match with a maximum ∆VF of 15 mV at 1 mA.

What is the effective carrier lifetime for these diodes?

The effective carrier lifetime (τ) for all diodes in this series is 100 ps maximum, measured with the Krakauer method at 5 mA.