RF Diode HSMS-282C-TR2G product image

HSMS-282C-TR2G

  • Description:RF DIODE SCHOTTKY 15V SOT-323
  • Series:-

SKU:e1aba72f8cbd Category: Brand:

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HSMS-282C-TR2G is listed in the RF Diode range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is RF DIODE SCHOTTKY 15V SOT-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for HSMS-282C-TR2G

  • Description:RF DIODE SCHOTTKY 15V SOT-323
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):15V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:12Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

RF Diode datasheet and documents for HSMS-282C-TR2G

HSMS-282C-TR2G

RF Diode Overview

The HSMS-282C-TR2G is a surface mount RF Schottky barrier diode from the HSMS-282x series, manufactured by Broadcom Limited. It features a Series configuration within an SOT-363 package. Key electrical specifications include a maximum breakdown voltage of 15 V and a typical forward voltage of 340 mV at 0.5 mA. The device exhibits a maximum reverse leakage current of 10 nA at 15 V and a typical capacitance of 1 pF at 0 V. Dynamic resistance is typically 12 ohms at 5 mA. It operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Series configuration provides matched diodes for consistent performance in differential circuits.
  • SOT-363 package offers increased flexibility and reduced board space compared to larger packages.
  • Low turn-on voltage ensures efficient operation across all current levels.
  • Manufacturing techniques ensure dice are taken from adjacent wafer sites for high matching accuracy.

RF Diode Applications

  • DC biased small signal detectors up to 1.5 GHz
  • Biased or unbiased large signal detectors for AGC or power monitoring up to 4 GHz
  • Mixers and frequency multipliers up to 6 GHz

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for Product Change Notices (PCN) regarding manufacturing site updates. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent damage during assembly.

RF Diode Selection Notes

Select this part when a series pair configuration is required for balanced mixer or detector topologies. The SOT-363 package is suitable for designs prioritizing compact footprint without sacrificing thermal performance. Compare SPICE parameters against alternative families like HSMS-280x for high voltage or HSMS-286x for ultra-low capacitance needs.

RF Diode Part Context

This component belongs to the HSMS-282x family of surface mount RF Schottky barrier diodes originally developed by Agilent Technologies. The series is characterized by low series resistance and good RF characteristics, making it a versatile choice for analog and digital applications requiring reliable switching and detection capabilities.

RF Diode Replacement Considerations

Direct substitutes within the same series include HSMS-282B (Single), HSMS-282E (Common Anode), and HSMS-282F (Common Cathode). For identical series configuration but different packaging, consider HSMS-2822 in SOT-23/SOT-143. Verify pinout compatibility before substitution.

RF Diode FAQ

What is the specific configuration of the HSMS-282C?

The HSMS-282C is configured as a Series pair of Schottky diodes.

How does the SOT-363 package affect thermal performance?

The SOT-363 package utilizes a copper leadframe with thermal conductivity four times higher than Alloy 42 used in SOT-23/SOT-143, enabling better heat dissipation despite its smaller size.

What is the maximum junction temperature rating?

The maximum junction temperature is 150°C under all operating conditions.

HSMS-282C-TR2GHSMS-282C-TR2G

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