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HUF76419D3ST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 60V 20A TO252AA. Review the specifications below when checking this part for your BOM.
The Fairchild Semiconductor HUF76419D3ST is an N-channel enhancement mode MOSFET belonging to the UltraFET series. It features a maximum drain-source voltage of 60 V and a continuous drain current rating of 20 A. The device utilizes a DPAK (TO-252) surface-mount package with three pins. Key electrical characteristics include a maximum on-resistance of 37 mΩ, a gate threshold voltage range of 1 V to 3 V, and a maximum power dissipation of 75 W. It operates within a temperature range of -55 °C to +175 °C.
Verify the manufacturer marking against ON Semiconductor records, as Fairchild's semiconductor division was acquired by ON Semiconductor. Confirm the specific suffix 'D3ST' matches the intended tape-and-reel or bulk configuration required for your production line. Ensure the component date code aligns with your supply chain requirements.
Select this component when a 60 V N-channel MOSFET with high current handling capability is required in a compact surface-mount form factor. The 37 mΩ on-resistance makes it suitable for low-loss power switching. Verify that the thermal management design supports the 75 W dissipation rating under your specific operating conditions.
This part is part of the UltraFET family, originally developed by Harris Semiconductor and later integrated into Fairchild Semiconductor's portfolio following acquisition. The product line focuses on high-performance power MOSFETs for general-purpose switching applications. The specific model represents a standard offering within this established series.
Check for direct equivalents from ON Semiconductor, which now holds the rights to the UltraFET brand. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) before substituting with other 60 V N-channel MOSFETs.
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