IDP30C65D2XKSA1

Diode Arrays Overview

The IDP30C65D2 is a Rapid Switching Emitter Controlled Diode from the Common Cathode Series. It features two diodes in a PG-TO220-3 package with a 650 V repetitive peak reverse voltage (VRRM). Each diode supports a forward current of 15 A at 25°C case temperature, reducing to 15 A at 100°C. The typical forward voltage is 1.6 V at 25°C and 1.65 V at 175°C. Reverse recovery time is typically 31 ns at 25°C, with a reverse recovery charge of 0.20 µC. Maximum power dissipation is 92 W at 25°C.

Diode Arrays Feature Summary

• Utilizes 650 V emitter-controlled technology for fast recovery and soft switching characteristics.
• Features low reverse recovery charge and stable forward voltage over temperature ranges.
• Supports easy paralleling and operates up to a 175 °C junction temperature.
• Qualified according to JEDEC standards for industrial target applications.

Diode Arrays Applications

• Boost diode in CCM PFC
• Industrial power control circuits
• High efficiency switching applications

Diode Arrays Procurement Notes

Verify the component against the official Infineon datasheet revision 2.1 dated September 2014. Confirm that the marking code matches 'C30ED2' and the package type is PG-TO220-3. Ensure the ordering suffix XKSA1 corresponds to the required RoHS compliant and Pb-free lead plating specifications.

Diode Arrays Selection Notes

Select this component for designs requiring soft switching and low reverse recovery charge within a common cathode configuration. Evaluate thermal management carefully as the junction-to-case thermal resistance is 1.63 K/W per diode. Ensure operating conditions remain below 80% of maximum ratings to optimize lifetime and reliability.

Diode Arrays Part Context

This device belongs to the Emitter Controlled Diode Rapid 2 Common Cathode Series. It complements high-power 600 V/650 V diode portfolios by bridging the gap between CoolSiC diodes and previously released emitter-controlled diodes. It targets cost/performance balance for applications switching between 18 kHz and 100 kHz.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Diode Arrays FAQ

What is the internal emitter inductance value?

The internal emitter inductance is typically 7.0 nH when measured 5 mm from the case.

How does the forward voltage change with temperature?

The forward voltage is 1.60 V at 25°C and increases to 1.65 V at 175°C junction temperature under a 15 A forward current.

What are the pin definitions for the package?

Pin 1 is Anode (A1), Pin 3 is Anode (A2), and Pin 2 along with the backside serve as the Cathode (C).