IDW20G65C5BXKSA1

Diode Arrays Overview

The IDW20G65C5BXKSA1 is a dual anode common cathode Silicon Carbide Schottky diode from Infineon's 5th Generation thinQ! family. It features a 650 V DC blocking voltage and two legs, each rated for a continuous forward current of 10 A at a case temperature below 125°C. The device exhibits a typical forward voltage of 1.5 V per leg at 10 A and 25°C, with a total capacitive charge (QC) of 30 nC (15 nC per leg). It operates within a junction temperature range of -55°C to +175°C and utilizes a PG-TO247-3 through-hole package.

Diode Arrays Feature Summary

• Dual anode common cathode configuration providing two independent diode legs in a single package.
• Silicon Carbide construction eliminates reverse recovery charge and forward recovery effects.
• Temperature-independent switching behavior ensures consistent performance across the operating range.
• High dv/dt ruggedness capability supports high-frequency operation without external snubbers.

Diode Arrays Applications

• Switch mode power supplies
• Power factor correction circuits
• Solar inverters
• Uninterruptible power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and JEDEC qualification requirements prior to integration. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component for applications requiring low switching losses and high-temperature reliability. The dual configuration simplifies circuit layout for synchronous rectification or bridge topologies. Evaluate thermal constraints carefully, as the continuous current rating depends on maintaining the case temperature below 125°C.

Diode Arrays Part Context

This part belongs to Infineon's 5th Generation thinQ! SiC Schottky Diode series, designed to complement CoolMOS families. It utilizes thin-wafer technology to achieve improved efficiency and lower figure of merit compared to previous generations. The product line targets high-power density solutions in the 650V voltage range.

Diode Arrays Replacement Considerations

IDW20G65C5B

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 650 V at a junction temperature of 25°C.

Does this device exhibit reverse recovery charge?

No, the Silicon Carbide Schottky construction ensures there is no reverse recovery charge (Qrr = 0).

What is the surge current capability?

The non-repetitive surge forward current is 58 A at TC = 25°C and 46 A at TC = 150°C for a 10 ms sine half-wave pulse.