IDW30G65C5XKSA1

$9.27

Description：DIODE SIL CARB 650V 30A PGTO2473
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Tube

SKU:f9578e0d81bb Category: Single Diodes Brand: Infineon Technologies

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Product introduction

IDW30G65C5XKSA1 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SIL CARB 650V 30A PGTO2473. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for IDW30G65C5XKSA1

Description：DIODE SIL CARB 650V 30A PGTO2473
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：30A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 30 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：220 µA @ 650 V
Capacitance @ Vr, F：860pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for IDW30G65C5XKSA1

IDW30G65C5XKSA1

Single Diodes Overview

The IDW30G65C5XKSA1 is a Silicon Carbide Schottky diode from Infineon's 5th Generation thinQ! family. It features a 650 V DC blocking voltage and supports a continuous forward current of 30 A at case temperatures below 115°C. The device exhibits a typical forward voltage of 1.5 V at 30 A and 25°C, with a maximum surge current capability of 165 A. Packaged in PG-TO247-3, it offers a thermal resistance junction-to-case of 0.8 K/W and operates within a temperature range of -55°C to 175°C.

Single Diodes Feature Summary

Utilizes Silicon Carbide semiconductor material for superior performance over silicon alternatives.
Exhibits zero reverse recovery charge and no forward recovery effects.
Demonstrates temperature-independent switching behavior for stable operation.
Features optimized high surge current capability and Pb-free lead plating.

Single Diodes Applications

Switch mode power supplies
Power factor correction circuits
Solar inverters
Uninterruptible power supplies

Single Diodes Procurement Notes

Verify the specific ordering suffix XKSA1 against official documentation to confirm package type and compliance details. Confirm that the component meets JEDEC qualification standards required for target applications. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under expected operating conditions.

Single Diodes Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling requirements due to improved efficiency. Consider the low figure of merit resulting from combined capacitive charge and forward voltage characteristics. Evaluate system reliability benefits associated with lower operating temperatures and reduced electromagnetic interference emissions.

Single Diodes Part Context

This component belongs to Infineon's 5th Generation thinQ! SiC Schottky Diode series. The design utilizes thin-wafer technology to achieve compact dimensions and enhanced thermal characteristics. It is engineered to complement 650V CoolMOS families, ensuring compatibility with stringent application requirements in this voltage range.