IPA50R520CPXKSA1

Single FETs, MOSFETs Overview

The IPA50R520CPXKSA1 is an N-Channel CoolMOS power transistor manufactured by Infineon Technologies. It utilizes silicon technology and features a TO-220-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 500 V, a continuous drain current (Id) of 13 A, and a maximum on-state resistance (Rds(on)) of 520 mOhms. The device operates with a gate-source voltage range of -20 V to +20 V and has a typical gate charge (Qg) of 48 nC. It supports a maximum power dissipation of 66 W at case temperature and functions within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Integrates CoolMOS technology for optimized switching performance in high-voltage applications.
• Features a robust single N-Channel enhancement mode configuration suitable for through-hole mounting.
• Designed for high-efficiency power switching with low on-state resistance characteristics.

Single FETs, MOSFETs Applications

• Power electronics systems
• Inverter circuits
• Motor drive implementations
• High-efficiency switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Infineon or authorized distributors before integration. Confirm that the TO-220-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the 66 W power dissipation rating at case temperature to maintain safe operating junction temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rated N-Channel MOSFET with moderate current handling is required. The 520 mOhm Rds(on) offers a balance between conduction losses and switching speed. Consider the TO-220-3 package for applications requiring through-hole assembly and direct heatsinking. Evaluate the 48 nC gate charge against driver capabilities to ensure adequate switching frequency performance without excessive drive losses.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's CoolMOS family, specifically designed for high-voltage power switching applications. It represents a discrete semiconductor solution utilizing advanced silicon planar technology. The product is intended for use in environments demanding reliable performance under high voltage stress and moderate current loads, fitting into standard industrial and consumer power supply architectures.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Infineon CoolMOS devices in the 500 V class, such as the IPP50R250CPXKSA1, noting differences in Rds(on) and current ratings. Verify pinout compatibility and thermal characteristics when substituting with equivalent parts from other manufacturers to ensure circuit integrity.

Single FETs, MOSFETs FAQ

What is the maximum power dissipation rating?

The maximum power dissipation is 66 W at case temperature.

What package type does this component use?

It uses a TO-220-3 through-hole package.