IPA60R600P7SXKSA1

$1.15

Description：MOSFET N-CH 600V 6A TO220
Series：CoolMOS™ P7
Mfr：Infineon Technologies
Package：Tube

SKU:f27ef7208df6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPA60R600P7SXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 6A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPA60R600P7SXKSA1

Description：MOSFET N-CH 600V 6A TO220
Series：CoolMOS™ P7
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id：4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：363 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：21W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-FP
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IPA60R600P7SXKSA1

IPA60R600P7SXKSA1

Single FETs, MOSFETs Overview

The Infineon IPA60R600P7SXKSA1 is a single N-channel CoolMOS P7 power MOSFET in a PG-TO 220 FullPAK package. It features a drain-source breakdown voltage of 650 V and a maximum on-state resistance of 600 mΩ at 25°C. The device supports a continuous drain current of 4 A at 25°C case temperature, with a pulsed current capability of 16 A. Typical gate charge is 9 nC, and the internal body diode exhibits a reverse recovery time of 160 ns. Thermal resistance from junction to case is 5.98 °C/W, allowing for a maximum operating junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Designed for hard and soft switching applications such as PFC and LLC stages due to outstanding commutation ruggedness.
Provides significant reduction in switching and conduction losses for improved efficiency.
Features excellent ESD robustness exceeding 2 kV (HBM) across all products.
Delivers optimized RDS(on)/package performance enabled by low specific on-resistance.

Single FETs, MOSFETs Applications

Active Power Factor Correction (PFC) stages
Hard switching PWM stages
Resonant switching stages
PC Silverbox power supplies
Server and Telecom power units

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering code against the manufacturer's official database to ensure compatibility with the PG-TO 220 FullPAK package. Confirm that the component meets JEDEC industrial qualification standards required for your specific application environment. Cross-reference datasheet revision history to validate parameter consistency before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high commutation ruggedness and low ringing tendency in both PFC and PWM stages. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the driving circuitry can handle the dynamic gate-source voltage limits and avalanche energy ratings defined in the electrical characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the 600V CoolMOS P7 series, which serves as the successor to the CoolMOS P6 generation. It utilizes Infineon's superjunction principle to combine fast switching capabilities with ease of use. The platform is engineered to offer superior efficiency and compactness compared to previous generations through reduced switching losses.