IPP037N06L3GHKSA1

Description：MOSFET N-CH 60V 90A TO220-3
Series：OptiMOS™ 3
Mfr：Infineon Technologies
Package：Tube

SKU:fa8f10d7fe19 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPP037N06L3GHKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 90A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPP037N06L3GHKSA1

Description：MOSFET N-CH 60V 90A TO220-3
Series：OptiMOS™ 3
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs：79 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13000 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3-1
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IPP037N06L3GHKSA1

IPP037N06L3GHKSA1

Single FETs, MOSFETs Overview

The IPP037N06L3GHKSA1 is an N-channel Power-Transistor from the OptiMOS 3 series, manufactured by Infineon Technologies. It features a PG-TO-220-3 package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V, a continuous drain current (Id) of 90 A at 25°C, and a maximum on-state resistance (Rds(on)) of 3.7 mΩ at 10 V gate drive. The device supports a wide operating temperature range from -55°C to +175°C junction temperature, with a power dissipation rating of 167 W.

Single FETs, MOSFETs Feature Summary

Optimized low on-state resistance for high efficiency
Enhanced gate charge characteristics for fast switching
Robust avalanche capability for improved reliability

Single FETs, MOSFETs Applications

High-efficiency synchronous rectification
DC-DC converter circuits
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix HKSA1 against official Infineon documentation to confirm exact packaging and marking details. Confirm component availability status as distribution data may vary. Ensure compliance with RoHS directives and check for any specific automotive or industrial qualification requirements relevant to the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in a through-hole TO-220 package. Consider the thermal resistance values when designing heat sinks for high-power dissipation scenarios. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching performance and minimize losses.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of N-channel MOSFETs designed for low-voltage, high-current applications. It shares core electrical specifications with other variants like IPB037N06L3 G but differs in physical packaging and ordering codes. The technology focuses on reducing conduction losses while maintaining robust switching behavior.