IR21064

Gate Driver Overview

The IR21064 is a high-voltage, high-speed power MOSFET and IGBT driver featuring independent high-side and low-side referenced output channels. It operates within a supply voltage range of 10 V to 20 V. The device provides an output current capability of 200 mA. Key timing parameters include a maximum turn-on delay time of 220 ns, a maximum turn-off delay time of 200 ns, a propagation delay of up to 300 ns, a rise time of 220 ns, and a fall time of 80 ns. It supports CMOS and TTL logic inputs and functions reliably across an operating temperature range from -40°C to +125°C.

Gate Driver Feature Summary

• Independent high-side and low-side output channels for flexible half-bridge or full-bridge configurations
• High-voltage integrated circuit technology designed for robust driving of power transistors
• Compatible with standard CMOS and TTL logic interfaces for direct microprocessor connection

Gate Driver Applications

• Motor control systems requiring precise switching of power devices
• Power supply circuits utilizing half-bridge topologies
• Inverter designs for AC drive applications

Gate Driver Procurement Notes

Verify the specific suffix (e.g., STRPBF) against your bill of materials to ensure correct packaging and lead times. Confirm RoHS compliance status through official Infineon documentation before finalizing procurement. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Ensure storage conditions meet humidity sensitivity requirements specified in the datasheet.

Gate Driver Selection Notes

Select this component when independent high and low side driving is required without internal dead-time generation. Verify that the 200 mA output current meets the gate charge requirements of the target MOSFETs or IGBTs. Ensure the input logic levels are compatible with the controlling microcontroller or DSP. Consider thermal management as the power dissipation rating is limited to 1 W.

Gate Driver Part Context

The IR21064 belongs to the IR2106 family of high-voltage gate drivers from Infineon Technologies. This series is engineered for driving both N-channel and P-channel power MOSFETs in various power conversion applications. The device integrates bootstrap diode functionality internally, simplifying the high-side driver circuit design compared to discrete solutions.

Gate Driver Replacement Considerations

The IR2106STRPBF is a documented equivalent variant within the same product family. Verify pin compatibility and electrical specifications before substitution.