IRF9530PBF

Single FETs, MOSFETs Overview

The IRF9530PBF is a third-generation P-channel power MOSFET manufactured by Vishay Siliconix. It features a TO-220AB package with a drain-source voltage (VDS) of -100 V and a continuous drain current (ID) of -12 A at 25 °C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 0.30 Ω at VGS = -10 V. Key electrical parameters include a total gate charge (Qg) of 38 nC, a gate-source threshold voltage (VGS(th)) ranging from -2.0 V to -4.0 V, and a maximum power dissipation of 88 W at 25 °C. It supports an operating junction temperature up to 175 °C.

Single FETs, MOSFETs Feature Summary

• Repetitive avalanche rated for ruggedized operation
• Fast switching capability with dynamic dV/dt rating
• Designed for ease of paralleling in high-current applications
• Simple drive requirements suitable for standard logic interfaces

Single FETs, MOSFETs Applications

• Commercial-industrial power switching circuits
• DC-DC converter topologies requiring P-channel control
• Motor driver stages utilizing low-side or high-side configurations
• General-purpose power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance status. The 'PbF' suffix indicates lead-free terminations which are RoHS-compliant. Confirm that the required package variant matches the TO-220AB specification. Ensure technical specifications align with the latest datasheet revision before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a robust P-channel solution with moderate voltage ratings. The TO-220AB package provides effective thermal management for power levels approaching 50 W. Evaluate the 0.30 Ω RDS(on) against system efficiency targets. Consider the 175 °C junction temperature limit for high-temperature environments. Verify gate drive voltage compatibility with the specified threshold range.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix third-generation Power MOSFET family. These transistors combine fast switching speeds with low on-resistance and cost-effectiveness. The TO-220AB package is widely accepted in the industry due to its low thermal resistance and mounting simplicity. This generation represents an evolution in ruggedized device design for commercial and industrial sectors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the P-channel configuration, -100 V rating, and TO-220AB package. Verify that alternative components meet or exceed the 0.30 Ω RDS(on) and -12 A current capabilities. Check pinout compatibility and thermal resistance characteristics to ensure seamless integration without redesigning the PCB layout.