IRFB3407ZPBF

Single FETs, MOSFETs Overview

The IRFB3407ZPbF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a lead-free TO-220AB package. It features a 75V drain-to-source breakdown voltage and a maximum continuous drain current of 122A at 25°C case temperature. The device exhibits a typical on-resistance of 5.0mΩ and a maximum of 6.4mΩ at VGS=10V. Key dynamic parameters include a total gate charge of 79nC (typical) and an internal gate resistance of 0.70Ω. It supports a maximum power dissipation of 230W and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Enhanced body diode dV/dt and dI/dt capability for improved switching performance
• Fully characterized capacitance and avalanche safe operating area (SOA)
• Improved gate, avalanche, and dynamic dv/dt ruggedness

Single FETs, MOSFETs Applications

• Battery management systems
• High speed power switching circuits
• Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify the complete part number includes the PbF suffix to confirm lead-free compliance. Confirm the package type matches the required TO-220AB footprint for your PCB layout. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet for your specific operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust handling of avalanche energy and fast diode recovery characteristics. The low on-resistance makes it suitable for efficient power conversion where conduction losses are critical. Consider the package limitations for current carrying capacity if case temperatures exceed standard ratings.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology optimized for high current density and low on-state resistance. The product is designed for industrial qualification standards and is intended for use in demanding power electronics environments requiring reliable switching performance.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current capabilities, and package dimensions.