IRFC3810B

Description：MOSFET 100V 170A DIE
Series：HEXFET®
Mfr：Infineon Technologies
Package：Bulk

SKU:0155572ed7aa Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFC3810B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 100V 170A DIE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFC3810B

Description：MOSFET 100V 170A DIE
Series：HEXFET®
Mfr：Infineon Technologies
Package：Bulk
FET Type：-
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170A
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9mOhm @ 170A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Single FETs, MOSFETs datasheet and documents for IRFC3810B

IRFC3810B

Single FETs, MOSFETs Overview

The IRFC3810B is a single N-channel power MOSFET manufactured by Infineon Technologies, utilizing HEXFET technology. It is supplied in a bare die format, designed for high-current applications requiring compact integration. The component features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 170 A at 25°C. Key electrical parameters include a maximum on-resistance (RDS(on)) of 9 mΩ at 10 V gate drive, a typical total gate charge (QG) of 260 nC, and a maximum junction temperature (Tj) of 175 °C.

Single FETs, MOSFETs Feature Summary

Utilizes Infineon's HEXFET technology for optimized performance in power switching applications.
Supplied as a bare die to facilitate custom packaging and high-density board designs.
Engineered for low conduction losses with minimized on-state resistance.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
Motor control systems
Power supply modules

Single FETs, MOSFETs Procurement Notes

Verify the specific die specifications and handling requirements directly with Infineon Technologies or authorized distributors before procurement. As a bare die component, ensure that your assembly process supports flip-chip or wire-bonding techniques suitable for this form factor. Confirm RoHS compliance status and check for any obsolescence notices, as availability may vary based on production cycles.

Single FETs, MOSFETs Selection Notes

Select the IRFC3810B when a bare die solution is required for space-constrained, high-current designs. Ensure the thermal management strategy accounts for the lack of a standard package heat sink. Compare against packaged equivalents like the IRFPS3810 if through-hole mounting is preferred over direct die attachment.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon HEXFET family of power MOSFETs. It shares core electrical characteristics with packaged variants such as the IRFPS3810 but differs in physical form factor. The bare die format allows system integrators to customize the substrate and interconnects, offering flexibility for specialized industrial and automotive electronics where standard packages do not fit.

Single FETs, MOSFETs Replacement Considerations

For equivalent packaged solutions, consider the IRFPS3810 which offers similar electrical ratings in a Super-247 (TO-274AA) through-hole package. Verify pinout compatibility and thermal resistance differences when transitioning from bare die to packaged components.