IRFHS8342TR2PBF

$0.58

Description：MOSFET N-CH 30V 8.8A PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)

SKU:ca810791f8cc Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFHS8342TR2PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 8.8A PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFHS8342TR2PBF

Description：MOSFET N-CH 30V 8.8A PQFN
Series：-
Mfr：Infineon Technologies
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id：2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-6
Package / Case：6-PowerVDFN

Single FETs, MOSFETs datasheet and documents for IRFHS8342TR2PBF

IRFHS8342TR2PBF

Single FETs, MOSFETs Overview

The IRFHS8342TR2PBF is a 30V N-channel HEXFET power MOSFET in a PQFN 2x2mm package. It features a maximum drain-to-source voltage of 30V and a gate-to-source voltage rating of ±20V. The device supports a continuous drain current of up to 19A at 25°C case temperature, with a typical on-resistance of 16mΩ at VGS=10V. Total gate charge is typically 4.2nC at VGS=4.5V. Thermal resistance from junction to case (bottom) is 13°C/W, and the operating junction temperature range extends from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low profile design enables increased power density within compact footprints.
Compatible with standard surface mount manufacturing techniques for simplified assembly.
Industrial qualification level ensures enhanced reliability under demanding conditions.

Single FETs, MOSFETs Applications

Control MOSFET for Buck Converters
System Load Switch

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm that the specific TR2 suffix corresponds to the mini-reel form factor. Check for End-of-Life status as indicated by official notices. Ensure storage and handling procedures comply with MSL1 moisture sensitivity requirements during PCB assembly.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management capabilities based on the specified junction-to-case resistance. Verify that the gate drive voltage meets the threshold requirements for optimal conduction performance. Consider the physical dimensions of the PQFN package against available board space constraints. Assess the continuous and pulsed current ratings relative to the expected load profiles.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology optimized for low on-resistance and efficient switching characteristics. The product line targets applications requiring high power density and robust thermal performance in small form factors.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 30V voltage rating and PQFN 2x2mm package dimensions. Verify equivalent electrical parameters including on-resistance and gate charge specifications.