Single FETs, MOSFETs IRFP460 product image

IRFP460

$1.50
  • Description:MOSFET N-CH 500V 18.4A TO247-3
  • Series:PowerMESH™ II
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:72658eef2a8e Category: Brand:

  
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IRFP460 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 500V 18.4A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP460

  • Description:MOSFET N-CH 500V 18.4A TO247-3
  • Series:PowerMESH™ II
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:18.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:270mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:128 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2980 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):220W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP460

IRFP460

Single FETs, MOSFETs Overview

The STMicroelectronics IRFP460 is a PowerMESH II N-channel enhancement mode MOSFET housed in a TO-247 package. It features a drain-source voltage rating of 500 V and a continuous drain current of 18.4 A at 25°C case temperature. The device exhibits a typical static drain-source on-resistance of 0.22 Ω, with a maximum limit of 0.27 Ω under specified test conditions. Total gate charge is typically 95 nC, supporting fast switching applications.

Single FETs, MOSFETs Feature Summary

  • PowerMESH II technology provides optimized Ron*area figure of merit for improved efficiency.
  • Extremely high dv/dt capability ensures robust performance during rapid voltage transitions.
  • 100% avalanche tested to guarantee ruggedness and reliability under inductive load switching.

Single FETs, MOSFETs Applications

  • Switch mode low power supplies (SMPS)
  • High current, high speed switching circuits
  • DC-AC converters for welding equipment
  • Uninterruptible power supplies (UPS) and motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer source when ordering, as this component type is produced by multiple vendors including STMicroelectronics, Vishay, and NXP. Confirm that the received part matches the exact electrical specifications and physical dimensions provided in the official datasheet. Ensure compliance with RoHS directives if lead-free variants are required for your assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage blocking capabilities combined with moderate current handling. The TO-247 package facilitates effective thermal management through direct mounting to heatsinks. Consider the total gate charge and switching times when designing drive circuits for high-frequency operation to minimize switching losses.

Single FETs, MOSFETs Part Context

This device belongs to the PowerMESH II family, representing an evolution of MESH OVERLAY technology. The layout refinements improve the figure of merit while maintaining leading-edge switching speed and ruggedness. It serves as a general-purpose power transistor for industrial and commercial power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IRFP460PBF or IRFP460A from other manufacturers. Verify pinout compatibility and ensure thermal resistance values align with existing heatsink designs before substitution.

Single FETs, MOSFETs FAQ

What is the peak diode recovery voltage slope rating?

The IRFP460 has a peak diode recovery voltage slope (dv/dt) rating of 3.5 V/ns.

Is the device rated for repetitive avalanche energy?

Yes, the device is 100% avalanche tested and supports a single pulse avalanche energy of up to 960 mJ.

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