IRLB8743PBF

Single FETs, MOSFETs Overview

The IRLB8743PbF is a StrongIRFET power MOSFET in a TO-220AB package. It features a 30V drain-to-source voltage and a maximum continuous drain current of 78A at 25°C case temperature. The device exhibits a typical on-resistance of 2.5mΩ at VGS=10V and 3.5mΩ at VGS=4.5V. Total gate charge is typically 36nC, with a junction-to-case thermal resistance of 1.11°C/W. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Optimized for UPS and inverter applications
• Ultra-low gate impedance for high-frequency switching
• Fully characterized avalanche voltage and current ratings

Single FETs, MOSFETs Applications

• High frequency synchronous buck converters for computer processor power
• High frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use
• UPS and inverter applications

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact Infineon Technologies part number IRLB8743PbF. Confirm the physical package is TO-220AB and the marking indicates lead-free construction. Ensure the datasheet version aligns with the required electrical specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance at 4.5V gate drive is critical for efficiency. The TO-220AB package provides robust mechanical mounting for higher power dissipation scenarios compared to surface mount options. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance.

Single FETs, MOSFETs Part Context

This N-channel HEXFET power MOSFET belongs to the StrongIRFET family designed for industrial markets. It integrates an intrinsic body diode and utilizes silicon technology. The device is qualified for industrial applications and supports high-current switching operations within its absolute maximum ratings.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Do not assume functional equivalence with other 30V MOSFETs without verifying pinout compatibility and specific electrical parameters like RDS(on) and gate charge.