IRLD014

Single FETs, MOSFETs Overview

The IRLD014 is a Vishay Siliconix N-Channel Power MOSFET in an HVMDIP package. It features a 60 V drain-source voltage and a maximum continuous drain current of 1.7 A at 25 °C. The device has a maximum on-resistance of 0.20 Ω at VGS = 5 V. Total gate charge is 8.4 nC, with turn-on delay time of 9.3 ns and rise time of 110 ns. Maximum power dissipation is 1.3 W at 25 °C, with a junction temperature range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Logic-level gate drive capability for direct microcontroller interfacing
• HVMDIP four-pin DIP package designed for automatic insertion and end stacking
• Dual-drain configuration providing thermal linkage to the mounting surface
• Fast switching performance with dynamic dV/dt rating

Single FETs, MOSFETs Applications

• Low-power DC-DC converter circuits
• General-purpose low-side switching applications
• Battery-powered equipment requiring logic-level control
• Automotive electronics compatible with standard pin spacing

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number IRLD014 typically requires a suffix such as PbF for lead-free compliance. Confirm that the procurement order matches the exact package style and termination requirements specified in the official datasheet to ensure correct component integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a through-hole N-Channel MOSFET with logic-level gate drive. The HVMDIP package supports machine insertion and allows for vertical stacking on standard 0.1-inch centers. Ensure the application current remains within the 1.7 A continuous limit and consider the thermal resistance characteristics for heat dissipation.

Single FETs, MOSFETs Part Context

This device belongs to the third-generation power MOSFET family from Vishay Siliconix. These transistors combine fast switching speeds with ruggedized device design and low on-resistance. The IRLD014 specifically utilizes the HVMDIP case style to offer a cost-effective solution for applications needing reliable through-hole mounting options.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference tool for parametrically similar parts. Verify that any substitute maintains the same N-Channel configuration, 60 V rating, and HVMDIP package dimensions to ensure mechanical compatibility.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 1.7 A at an ambient temperature of 25 °C.

Is the device suitable for logic-level driving?

Yes, the RDS(on) is specified at VGS = 5 V and 4 V, making it suitable for logic-level gate drive applications.

How does the package facilitate thermal management?

The dual-drain design serves as a thermal link to the mounting surface, aiding in power dissipation up to 1.3 W.