IRLS640A

Single FETs, MOSFETs Overview

The IRLS640A is an N-Channel Logic Level A-FET produced using planar DMOS technology. It features a drain-to-source voltage of 200 V and a continuous drain current of 9.8 A at 25°C case temperature. The device exhibits a maximum on-state resistance of 180 mΩ at VGS = 5 V. Key electrical characteristics include a typical gate charge of 40 nC, reverse transfer capacitance of 95 pF, and total power dissipation of 63 W at 25°C. Thermal resistance from junction to case is 1.7 °C/W.

Single FETs, MOSFETs Feature Summary

• Logic-level gate drive capability for direct interface with standard logic circuits
• Superior switching performance optimized for high efficiency applications
• High energy pulse withstand capability in avalanche and commutation modes
• Improved dv/dt capability for robust operation in demanding environments

Single FETs, MOSFETs Applications

• High efficiency switching DC/DC converters
• Switch mode power supplies
• DC-AC converters for uninterrupted power supply systems
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against ON Semiconductor's official database due to naming conventions resulting from the Fairchild integration. Confirm package type TO-220F availability and check for updated ordering suffixes. Ensure compliance with RoHS standards and verify that the component is not intended for life support or medical implantation applications as per safety disclaimers.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V N-Channel MOSFET with logic-level gate drive is required. The low on-state resistance supports efficient power handling in switch mode applications. Consider the thermal resistance and power dissipation limits relative to the specific heatsinking strategy. Validate the avalanche energy rating against the circuit's inductive load requirements.

Single FETs, MOSFETs Part Context

This device belongs to the N-Channel enhancement mode power field effect transistor category. It utilizes proprietary planar DMOS technology tailored to minimize on-state resistance. The product line is designed for applications requiring superior switching performance and high energy pulse withstand capabilities in both avalanche and commutation modes.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent parts within the same voltage and current ratings. Verify pinout compatibility for TO-220F packages. Ensure replacement devices meet the same logic-level gate drive specifications and thermal performance criteria.