IS42S16800D-6T-TR

Memory IC Overview

The IS42S16800D-6T-TR is a 128Mb Synchronous DRAM manufactured by ISSI. It operates at a maximum clock frequency of 166 MHz with a CAS latency of 3, achieving an access time of 5.4 ns. The device supports a 16-bit data bus width and is organized as 8 Meg x 16. It utilizes a 54-pin TSOP II package and functions within a supply voltage range of 3.0 V to 3.6 V for both VDD and VDDQ. The component is designed for industrial temperature applications, supporting operation from -40°C to +85°C.

Memory IC Feature Summary

• Features a fully synchronous pipeline architecture where all signals are referenced to the positive clock edge.
• Includes internal bank interleaving capability to hide row access and precharge times for seamless high-speed random access.
• Supports programmable burst lengths including 1, 2, 4, 8, and full page, along with sequential or interleave burst sequences.
• Provides power-saving modes such as self-refresh with programmable periods and power-down mode.

Memory IC Applications

• High-speed data transfer systems requiring pipeline architecture
• Industrial temperature environment memory storage
• Systems utilizing LVTTL interface compatibility

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required package type and temperature grade. Confirm the lead time and production cycle status directly with the manufacturer or authorized distributor before placing orders. Ensure compliance with RoHS requirements and check for any moisture sensitivity handling instructions during procurement and storage.

Memory IC Selection Notes

Select this component when a 128Mb density with a 16-bit interface is required in a TSOP II package. It is suitable for designs needing 166 MHz operation speeds with low access times. Consider the industrial temperature range if the application operates in extreme environments. Verify that the system can support the necessary 3.3V power supplies and LVTTL logic levels.

Memory IC Part Context

This part belongs to the IS42S16800D series of 128Mb SDRAMs from Integrated Silicon Solution Inc. The series includes variants with different speed grades and packaging options, such as BGA. The 'D' designation typically refers to the specific pinout and package configuration, while the '-6' indicates the 166 MHz speed grade. This series is designed for general-purpose high-speed memory applications.

Memory IC Replacement Considerations

Check for other speed grades within the same series, such as -7 or -75E, which offer lower frequencies but may be compatible. Verify package compatibility if substituting with BGA versions like the IS42SM16800H. Ensure that any replacement maintains the 16-bit data width and 3.3V operating voltage requirements.

Memory IC FAQ

What is the organization of the IS42S16800D?

The device is internally configured as a quad-bank DRAM with each bank organized as 4,096 rows by 1,024 columns by 16 bits.

How does the Auto Precharge function work?

Auto Precharge initiates a precharge at the earliest valid stage within a burst sequence when A10 is HIGH during a READ or WRITE command, eliminating the need for an explicit precharge command.

What refresh cycles are supported?

The device supports Auto Refresh (CBR) requiring 4096 refresh cycles every 64 ms, as well as Self Refresh mode with programmable refresh periods.