IS43R86400D-5TLI

Memory IC Overview

The IS43R86400D-5TLI is a 512-Mbit DDR SDRAM manufactured by ISSI. It features a 64M x 8 organization and operates at a maximum clock frequency of 200 MHz with a 5 ns access time. The device requires a VDD/VDDQ supply voltage between 2.5 V and 2.7 V. It utilizes a 66-pin TSOP-II package and supports an operating temperature range from 0°C to +70°C.

Memory IC Feature Summary

• Double-data rate architecture enabling two data transfers per clock cycle for high-speed operation.
• Four internal banks allowing concurrent operations to improve throughput efficiency.
• SSTL_2 compatible I/O interface with differential clock inputs and DLL alignment.

Memory IC Applications

• High-speed data transfer in pipeline architectures
• Concurrent memory bank operations
• Systems requiring programmable burst lengths and CAS latencies

Memory IC Procurement Notes

Verify the specific speed grade (-5) and industrial temperature range (I suffix) against the required system specifications. Confirm that the 66-pin TSOP-II package footprint matches the design layout. Ensure power supply voltages remain within the 2.5V to 2.7V tolerance during operation.

Memory IC Selection Notes

Select this component when a 512-Mbit capacity with an 8-bit data bus width is required. The -5 speed grade supports up to 200 MHz operation. Consider the TSOP-II package if surface-mount space constraints favor this form factor over BGA options available in the same series.

Memory IC Part Context

This part belongs to the IS43/46R86400D family of 512Mb DDR SDRAMs. It shares architectural similarities with other configurations like 16Mx32 and 32Mx16, differing primarily in data bus width and pinout configuration while maintaining the same core density and operational principles.

Memory IC Replacement Considerations

IS43R86400D-5BLI: Offers identical electrical specifications but uses a 60-ball BGA package instead of TSOP-II.

Memory IC FAQ

How is the Data Mask (DM) signal utilized?

The DM signal masks write data at both rising and falling edges of the data strobe (DQS), allowing selective writing to memory locations.

What are the supported burst lengths?

The device supports programmable burst lengths of 2, 4, and 8, which can be configured as either sequential or interleave modes via the Mode Register.