Memory IC IS61QDB21M36A-250M3L product image

IS61QDB21M36A-250M3L

$36.51
  • Description:IC SRAM 36MBIT PARALLEL 165LFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:3574e921c591 Category: Brand:

  
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IS61QDB21M36A-250M3L is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC SRAM 36MBIT PARALLEL 165LFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS61QDB21M36A-250M3L

  • Description:IC SRAM 36MBIT PARALLEL 165LFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QUAD
  • Memory Size:36Mbit
  • Memory Organization:1M x 36
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.71V ~ 1.89V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-LFBGA (15x17)
  • Access Time:8.4 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for IS61QDB21M36A-250M3L

IS61QDB21M36A-250M3L

Memory IC Overview

The IS61QDB21M36A-250M3L is a 36Mb Quad Data Rate (QDR) II+ synchronous static random-access memory manufactured by ISSI. It features a 1M x 36 organization and supports clock frequencies up to 250 MHz. The device utilizes a Double Data Rate (DDR) interface for both read and write input ports, enabling high-speed data transfer. It operates on a +1.8V core power supply with I/O voltages of 1.5V or 1.8V. The component is housed in a 165-ball FBGA package designed for surface-mount technology.

Memory IC Feature Summary

  • Supports concurrent independent read and write operations through separate ports
  • Features an on-chip Delay-Locked Loop (DLL) to ensure wide data valid windows
  • Provides fixed 4-bit burst capability for synchronized read and write cycles

Memory IC Applications

  • High-performance networking equipment requiring low-latency buffering
  • Telecommunications infrastructure systems
  • Data routing and switching applications

Memory IC Procurement Notes

Verify the specific suffix M3L against the manufacturer's official datasheet to confirm pinout compatibility and voltage levels. Ensure that the ordering information matches the exact speed grade and package variant required for your design. Cross-reference the RoHS status and humidity sensitivity ratings with current production documentation before finalizing procurement plans.

Memory IC Selection Notes

Select this component when a 36-bit data width and 250 MHz synchronous operation are required. It is suitable for designs needing simultaneous read/write access without bus contention. Consider the 165-ball FBGA footprint for board space constraints. Verify that the system can support the necessary 1.8V core and 1.5V/1.8V I/O power domains.

Memory IC Part Context

This part belongs to the IS61QDB21M series of QDR SRAMs from ISSI. These devices are engineered for high-throughput applications where deterministic latency is critical. The series typically includes variants with different speeds and organizations, sharing common architectural features like DLL synchronization and dual-port independence.

Memory IC Replacement Considerations

Check for direct cross-references within the ISSI portfolio, such as other speed grades in the IS61QDB21M family. Verify if alternative manufacturers offer functionally equivalent QDR II+ parts with compatible pinouts and timing parameters.

IS61QDB21M36A-250M3LIS61QDB21M36A-250M3L
$36.51
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