IS61QDB22M18-250M3I

Memory IC Overview

The IS61QDB22M18-250M3I is a 36Mb (2M x 18) QUAD Synchronous SRAM manufactured by ISSI. It features a Double Data Rate (DDR) interface with separate read and write ports for concurrent operations. The device operates at a maximum clock frequency of 250 MHz, utilizing an on-chip Delay-Locked Loop (DLL). It employs a fixed 2-bit burst architecture with early write capability and supports programmable output driver impedance via the ZQ pin.

Memory IC Feature Summary

• Supports concurrent independent read and write operations through separate I/O ports.
• Features an internal DLL to maximize data valid window and support clock stop modes.
• Provides byte-write capability for granular data control during burst cycles.
• Includes boundary scan functionality compliant with IEEE 1149.1 standards.

Memory IC Applications

• High-speed networking equipment requiring low-latency buffering.
• Telecommunications infrastructure systems.
• Industrial automation controllers.
• Test and measurement instrumentation.

Memory IC Procurement Notes

Verify that the specific suffix M3I corresponds to the required temperature range and package variant against the manufacturer's official documentation. Confirm RoHS compliance status and moisture sensitivity levels prior to integration. Ensure power sequencing adheres strictly to the recommended VDD, VDDQ, and VREF application order to prevent device damage.

Memory IC Selection Notes

Select this component when a 2M x 18 organization and 250 MHz synchronous performance are required. The QUAD architecture allows simultaneous read/write access without bus turnaround delays. Verify that the system design accommodates the +1.8V core supply and HSTL I/O interface requirements for proper signal integrity.

Memory IC Part Context

This part belongs to the IS61QDB series of high-performance synchronous SRAMs from Integrated Silicon Solution. The series offers various densities and organizations, including 1M x 36 configurations. These devices are designed for applications demanding high bandwidth and deterministic latency in embedded memory environments.

Memory IC Replacement Considerations

Cross-reference with other ISSI QDR SRAM variants such as the IS61QDB21Mx36 or IS61QDPB42M18A for alternative density or speed grades. Ensure any substitute maintains the 165-ball FBGA footprint and compatible voltage levels.