IS66WV51216EALL-70BLI-TR

Memory IC Overview

The IS66WV51216EALL-70BLI-TR is an 8 Mbit pseudo static random access memory (PSRAM) manufactured by ISSI. It features a memory organization of 512 k x 16 bits and provides a maximum access time of 70 ns. The device operates within a voltage range of 1.7 V to 1.95 V and supports asynchronous parallel interfaces. It is housed in a 48-ball BGA package measuring 6x8 mm and complies with RoHS standards.

Memory IC Feature Summary

• Integrates pseudo SRAM architecture utilizing self-refreshing DRAM arrays for high-density storage without external refresh circuitry.
• Supports asynchronous page mode operations to optimize data throughput during sequential access sequences.
• Features low-voltage operation capabilities suitable for power-constrained embedded systems.

Memory IC Applications

• Embedded systems requiring non-volatile-like persistence with SRAM speed.
• Industrial control units operating within extended temperature ranges.
• Portable electronic devices utilizing low-voltage power supplies.

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging configuration when sourcing. Confirm that the 1.7 V to 1.95 V supply requirement aligns with the target system's voltage rails. Ensure the 48-ball BGA footprint matches the PCB layout specifications. Check for RoHS compliance documentation if required by regulatory standards.

Memory IC Selection Notes

Select this component for applications needing 8 Mbit capacity in a compact BGA form factor. The 70 ns access time suits moderate-speed data buffering tasks. Consider the low-voltage specification for compatibility with modern low-power processors. Evaluate the thermal performance within the -40 C to +85 C operating range for environmental suitability.

Memory IC Part Context

This part belongs to the IS66WV51216 series of pseudo SRAM devices from ISSI. It shares architectural similarities with other members like the IS66WV51216EBLL-70BLI, differing primarily in supply voltage requirements. The series is designed to replace traditional SRAM or DRAM solutions where density and interface simplicity are prioritized.

Memory IC Replacement Considerations

The IS66WV51216EBLL-70BLI serves as a functional alternative but requires a higher voltage supply of 2.7 V to 3.6 V instead of the 1.7 V to 1.95 V range specified for the EALL variant. Verify voltage compatibility before substitution.