IS66WVE4M16ALL-70BLI

Memory IC Overview

The IS66WVE4M16ALL-70BLI is a 64Mb Pseudo Static Random Access Memory (PSRAM) utilizing a self-refresh DRAM array organized as 4M words by 16 bits. It features an industry-standard asynchronous interface with page mode support for enhanced bandwidth. The device operates on dual voltage rails, VDD and VDDQ, both ranging from 1.7V to 1.95V. Key performance metrics include an interpage read access time of 70ns and an intrapage read access time of 20ns. Power consumption specifications include asynchronous operation current under 30mA, standby current below 180uA, and deep power-down current typically under 3uA.

Memory IC Feature Summary

• Supports asynchronous and page mode interfaces for flexible data transfer protocols.
• Incorporates transparent self-refresh mechanism requiring no external memory controller intervention.
• Features system-accessible configuration registers to manage refresh rates and low-power modes.
• Includes dedicated sleep enable pin to activate partial-array refresh or deep power-down states.

Memory IC Applications

• Low-power portable electronic devices
• Industrial temperature range applications (-40°C to +85°C)
• Automotive electronics systems
• High-density memory alternatives to standard SRAM

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and temperature rating. Confirm that the supply voltages match the 1.7V to 1.95V requirement for both core and I/O rails. Ensure the ZZ# pin handling aligns with the intended low-power mode strategy, as software access sequences alter its functionality.

Memory IC Selection Notes

Select this component when a high-density memory solution with low power consumption is required for portable or industrial environments. The dual voltage rail design allows independent optimization of core and I/O performance. Consider the configuration register capabilities if dynamic adjustment of refresh rates or page mode settings is necessary during operation.

Memory IC Part Context

This device belongs to the IS66WVE4M16 family of PSRAM products from Integrated Silicon Solution Inc. It serves as a high-speed CMOS pseudo-static random access memory designed specifically for low-power applications. The technology combines the density of DRAM with the ease of use of SRAM through integrated self-refresh circuitry.

Memory IC Replacement Considerations

Direct substitutes within the same family include variants with different speed grades or package options, such as the IS66WVE4M16EBLL-70BLI or IS66WVE4M16TBLL-70BLI. Verify compatibility regarding voltage ranges and package dimensions before substitution.

Memory IC FAQ

How does the Deep Power-Down mode affect stored data?

Entering Deep Power-Down mode disables all refresh-related activity, which causes any stored data in the device to become corrupted.

What is the function of the Configuration Register?

The Configuration Register defines how the device performs on-chip transparent self-refresh, controls page mode read access permissions, and sets low-power mode behaviors.

Can the ZZ# pin be tied to VDDQ permanently?

Yes, if the software-access sequence is used to modify the Configuration Register, the ZZ# pin can be tied to VDDQ, provided the system does not require Deep Power-Down mode.