ISL6612ECBZ

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:57d7e3a2c1ad Category: Gate Drivers Brand: Renesas Electronics Corporation

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Product introduction

ISL6612ECBZ is listed in the Gate Driver range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for ISL6612ECBZ

Description：IC GATE DRVR HALF-BRIDGE 8SOIC
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
Driven Configuration：Half-Bridge
Channel Type：Synchronous
Number of Drivers：2
Gate Type：MOSFET (N-Channel)
Voltage - Supply：10.8V ~ 13.2V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：1.25A, 2A
Input Type：Non-Inverting
Rise / Fall Time (Typ)：26ns, 18ns
Operating Temperature：0°C ~ 125°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package：8-SOIC-EP
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：36 V

Gate Driver datasheet and documents for ISL6612ECBZ

ISL6612ECBZ

Gate Driver Overview

The ISL6612ECBZ is a synchronous buck MOSFET high-side and low-side gate driver manufactured by Renesas Electronics. It features two independent drivers with a peak output current of 3 A. The device operates within a supply voltage range of 10.8 V to 13.2 V. Key timing parameters include a maximum propagation delay of 10 ns, a rise time of 26 ns, and a fall time of 18 ns. It supports N-channel MOSFETs and functions at non-inverting inputs. The component is housed in an 8-lead SOIC package with an exposed pad (SOIC-8 EP) for surface mount installation. It is rated for an operating temperature range from 0°C to +85°C.

Gate Driver Feature Summary

Integrated dual independent high-side and low-side drivers optimized for synchronous buck applications
Capable of driving N-channel MOSFETs with a 3 A peak output current capability
Features fast switching performance with 10 ns maximum propagation delay

Gate Driver Applications

Synchronous buck converter circuits
High-side and low-side MOSFET gate drive stages
DC/DC power conversion systems

Gate Driver Procurement Notes

Verify the specific suffix 'ECBZ' against official Renesas documentation to confirm the commercial grade temperature rating and tube packaging format. Confirm end-of-life status as multiple sources indicate discontinuation. Ensure the 8-lead SOIC with exposed pad footprint matches the target PCB design requirements before procurement.

Gate Driver Selection Notes

Select this component when a dedicated dual driver for synchronous rectification is required. The 3 A output current suits moderate-power applications. Verify that the 0°C to +85°C commercial temperature range meets system thermal constraints. Compare against the ISL6612BEIBZ if industrial temperature ratings are necessary instead.

Gate Driver Part Context

This part belongs to the ISL6612B series of gate drivers designed for power management ICs. It serves as a standalone solution for controlling external MOSFETs in switching regulators. The family includes variants with different temperature grades and packaging options, such as the ACBZ and BEIBZ models.