IV1Q12080T4

Single FETs, MOSFETs Overview

The IV1Q12080T4 is a silicon carbide (SiC) MOSFET manufactured by Inventchip, designed for high-voltage power switching applications. It features a drain-source voltage rating of 1200V and a maximum on-resistance of 100mΩ at VGS=20V and ID=10A. The device supports a continuous drain current of 42A at 25°C case temperature and handles a pulsed drain current of 70A. Operating junction temperatures range from -55°C to 175°C with a total power dissipation capability of 300W. It utilizes a TO-247-4 package.

Single FETs, MOSFETs Feature Summary

• High blocking voltage combined with low on-resistance
• Fast switching performance with reduced capacitance
• Robust intrinsic body diode characteristics

Single FETs, MOSFETs Applications

• Solar inverters
• Uninterruptible Power Supplies (UPS)
• Motor drivers
• High voltage DC/DC converters
• Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4 corresponds to the TO-247-4 package configuration. Confirm that the manufacturer's datasheet revision matches the required electrical specifications for your design. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high efficiency at elevated voltages. The SiC technology enables operation at higher frequencies compared to traditional silicon devices. Consider the gate charge requirements for driver selection and ensure the thermal design accommodates the specified power dissipation limits under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's series of silicon carbide MOSFETs. These components are engineered to replace silicon IGBTs or MOSFETs in demanding power electronics environments. The TO-247-4 form factor facilitates through-hole mounting for robust mechanical connections in industrial and renewable energy systems.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility if substituting other 1200V TO-247-4 SiC MOSFETs. Verify that the replacement device meets or exceeds the 100mΩ on-resistance and 1200V breakdown voltage ratings. Review switching energy parameters to ensure driver capabilities are sufficient.