Single FETs, MOSFETs IXTH1N450HV product image

IXTH1N450HV

$37.28
  • Description:MOSFET N-CH 4500V 1A TO247HV
  • Series:-
  • Mfr:Littelfuse Inc.
  • Package:Tube

SKU:5e0d88df766b Category: Brand:

  
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IXTH1N450HV is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 4500V 1A TO247HV. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTH1N450HV

  • Description:MOSFET N-CH 4500V 1A TO247HV
  • Series:-
  • Mfr:Littelfuse Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):4500 V
  • Current - Continuous Drain (Id) @ 25°C:1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:80Ohm @ 50mA, 10V
  • Vgs(th) (Max) @ Id:6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):520W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247HV
  • Package / Case:TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for IXTH1N450HV

IXTH1N450HV

Single FETs, MOSFETs Overview

The IXTH1N450HV is an N-channel enhancement mode high voltage power MOSFET manufactured by Littelfuse. It features a maximum drain-source voltage (VDSS) of 4500 V and a continuous drain current (ID) of 1 A at 25°C. The device has a maximum on-resistance (RDS(on)) of 80 ohms and is housed in a TO-247HV through-hole package. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • High voltage capability with 4500 V breakdown rating
  • Robust construction for pulse circuit applications
  • Through-hole mounting for secure mechanical attachment

Single FETs, MOSFETs Applications

  • High voltage power supplies
  • Capacitor discharge applications
  • Pulse circuits
  • Laser systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision when sourcing, as Littelfuse acquired IXYS components. Confirm that the TO-247HV package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the 80 ohm on-resistance to maintain junction temperatures within the specified -55°C to +150°C operating range during high-voltage operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring extreme voltage isolation rather than high current switching. The 1 A current limit and high on-resistance make it unsuitable for standard low-voltage power conversion. It is specifically optimized for blocking high voltages in pulsed or static high-voltage environments where standard MOSFETs would fail.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS high-voltage MOSFET family, now under Littelfuse. These devices utilize specialized trench technology to achieve high breakdown voltages while maintaining manageable gate charge characteristics. The TO-247HV package provides enhanced creepage and clearance distances compared to standard packages, supporting safe operation at 4.5 kV.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 4500 V rating and TO-247HV package. Verify pinout compatibility. Generic replacements may lack the specific avalanche ruggedness required for capacitor discharge loads.

IXTH1N450HVIXTH1N450HV
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