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JAN1N4112C-1 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 18V DO204AH. Review the specifications below when checking this part for your BOM.
The JAN1N4112C-1 is a 500 mW metallurgically bonded glass Zener diode in an axial-lead DO-35 package. It provides an 18 V nominal Zener voltage with a ±2% tolerance, as indicated by the 'C' suffix. The device operates within a junction and storage temperature range of -65 °C to +175 °C. Electrical characteristics include a maximum dynamic impedance of 100 Ohms at a test current of 250 µA, a maximum reverse leakage current of 13.7 µA at 13.7 V, and a noise density of 40 µV/√Hz.
Verify that the specific ordering suffix matches the required qualification level (JAN) and voltage tolerance (C for 2%). Confirm RoHS compliance status, as non-RoHS versions are standard for this military grade. Ensure the component meets MIL-PRF-19500/435 specifications before integration into sensitive designs.
Select the JAN1N4112C-1 when a precise 18 V reference with tight ±2% tolerance is required. This part is appropriate for designs needing hermetic sealing and radiation hardness. Consider the 100 Ohm impedance and 40 µV/√Hz noise density for signal integrity requirements in low-current regulator applications.
This component belongs to the 1N4099-1 through 1N4135-1 series of 500 mZener diodes manufactured by Microchip Technology. The series offers voltages from 1.8 to 100 V with various tolerance options. The JAN1N4112C-1 specifically targets applications requiring strict military qualification and robust performance under extreme thermal conditions.
Equivalent parts include JANTX1N4112C-1 and JANS1N4112C-1, which share the same electrical parameters but differ in qualification levels. Commercial equivalents like 1N4112-1 lack the military-grade hermetic sealing and radiation hardness specified for the JAN variant.
The 'C' suffix denotes a Zener voltage tolerance of ±2%, providing tighter precision compared to the standard ±5% tolerance found in other variants of the series.
Yes, the device is inherently radiation hard as described in Microsemi MicroNote 050, making it suitable for space and high-radiation environments.
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