Single Bipolar Transistors JAN2N3740 product image

JAN2N3740

$27.18
  • Description:TRANS PNP 60V 4A TO66
  • Series:-

SKU:cb36569b0528 Category: Brand:

  
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JAN2N3740 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 60V 4A TO66. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JAN2N3740

  • Description:TRANS PNP 60V 4A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 125mA, 1A
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 250mA, 1V
  • Power - Max:25 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)
  • Grade:Military
  • Qualification:MIL-PRF-19500/441

Single Bipolar Transistors datasheet and documents for JAN2N3740

JAN2N3740

Single Bipolar Transistors Overview

The JAN2N3740 is a silicon NPN power bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-66 metal can package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 4 A. Thermal management capabilities include a power dissipation rating of 25 W. The component operates within an extended temperature range from -65 °C to +200 °C, ensuring reliability in demanding environments.

Single Bipolar Transistors Feature Summary

  • High thermal stability with a maximum operating junction temperature of 200 °C
  • Robust mechanical construction using a hermetic TO-66 metal can package
  • Designed for high-power switching applications requiring significant current handling

Single Bipolar Transistors Applications

  • Military-grade power amplification circuits
  • High-reliability industrial switching regulators
  • Aviation electronic control systems

Single Bipolar Transistors Procurement Notes

Verify the specific JAN prefix designation to ensure compliance with military quality standards and radiation hardness requirements. Confirm that the TO-66 package dimensions match the target PCB footprint. Validate the manufacturer source to guarantee authenticity, as this component is often subject to strict supply chain controls due to its specialized application in defense and aerospace sectors.

Single Bipolar Transistors Selection Notes

Select this component when a ruggedized NPN transistor with high thermal endurance is required. Ensure the circuit design accommodates the 25 W power dissipation limit and provides adequate heat sinking. Verify that the 60 V breakdown voltage exceeds the peak transient voltages present in the application to prevent device failure during operation.

Single Bipolar Transistors Part Context

This part belongs to the JAN series of discrete semiconductors produced by Microchip Technology. The JAN designation indicates adherence to strict military specifications for performance and reliability. It serves as a high-power alternative to standard commercial transistors, offering superior durability for critical infrastructure and defense electronics where standard components may not suffice.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the JAN2N3740U4 variant, which shares identical electrical characteristics but differs in packaging format. Other compatible options within the same family include the JAN2N3737, though users must verify pinout compatibility and specific gain parameters before implementation.

JAN2N3740JAN2N3740
$27.18
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