Diode Arrays JANS1N5712UBCA product image

JANS1N5712UBCA

$126.61
  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-

SKU:f51282ee72ea Category: Brand:

  
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JANS1N5712UBCA is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANS1N5712UBCA

  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io) (per Diode):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANS1N5712UBCA

JANS1N5712UBCA

Diode Arrays Overview

The JANS1N5712UBCA is a Schottky barrier diode manufactured by Microchip Technology, designed for high-reliability applications. It features a ceramic surface-mount package (UB) and is qualified to the JANS level per MIL-PRF-19500/444. The device operates with a maximum repetitive reverse voltage of 16 V and an average forward current of 75 mA. Key electrical parameters include a maximum forward voltage of 1 V at 35 mA and a maximum reverse leakage current of 150 nA at 16 V. The junction temperature range spans from -65°C to +150°C.

Diode Arrays Feature Summary

  • Ceramic surface-mount construction providing enhanced durability for harsh environments
  • Qualified to JANS military standards for radiation-hardened high-reliability systems
  • Schottky technology enabling low forward voltage drop and fast switching characteristics

Diode Arrays Applications

  • Military aerospace electronic systems requiring radiation tolerance
  • High-reliability communication equipment operating in extreme temperatures
  • Spacecraft power management and signal rectification circuits

Diode Arrays Procurement Notes

Verify that the specific suffix CA corresponds to the required common anode configuration within the UB package family. Confirm JANS qualification status is explicitly stated on the manufacturer's certificate of compliance. Ensure procurement channels provide traceability documentation consistent with MIL-PRF-19500/444 requirements for space-grade components.

Diode Arrays Selection Notes

Select this component when radiation hardness and high-temperature operation are critical constraints. The ceramic UB package offers superior thermal stability compared to plastic alternatives. Compare against standard commercial Schottky diodes if environmental stress levels do not justify the specialized qualification costs. Ensure circuit design accommodates the 75 mA current limit and 16 V reverse voltage rating.

Diode Arrays Part Context

This part belongs to the 1N5712UB series of Schottky barrier diodes produced by Microchip Technology. The series includes various polarity options such as common cathode and doubler configurations. The JANS designation indicates a specific subset of these devices that meet stringent space-qualified reliability standards, distinguishing them from JAN or commercial variants.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing footprint and pinout before considering alternative manufacturers.

JANS1N5712UBCAJANS1N5712UBCA
$126.61
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