Single Bipolar Transistors JANSH2N2222AUA product image

JANSH2N2222AUA

$142.20
  • Description:TRANS NPN 50V 0.8A UA
  • Series:-

SKU:6ce112bc9648 Category: Brand:

  
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JANSH2N2222AUA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 0.8A UA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSH2N2222AUA

  • Description:TRANS NPN 50V 0.8A UA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:650 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UA
  • Grade:Military
  • Qualification:MIL-PRF-19500/255

Single Bipolar Transistors datasheet and documents for JANSH2N2222AUA

JANSH2N2222AUA

Single Bipolar Transistors Overview

The JANSH2N2222AUA is a radiation-hardened NPN silicon switching transistor manufactured by Microchip Technology. It is qualified to MIL-PRF-19500/255 standards with a radiation hardness level of 10K Rads (Si). The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 800 mA. It operates within a temperature range of -65°C to +175°C and utilizes a surface-mount ceramic package.

Single Bipolar Transistors Feature Summary

  • Radiation hardened to MIL-PRF-19500/255 Level JANSD (10K Rads Si)
  • High-speed NPN silicon switching capability
  • Ceramic surface-mount construction for reliability

Single Bipolar Transistors Applications

  • Spacecraft avionics systems
  • Satellite communication circuits
  • Military aerospace electronics

Single Bipolar Transistors Procurement Notes

Verify the specific radiation qualification level and datasheet revision before procurement. Confirm that the surface-mount package variant meets the mechanical constraints of the target assembly. Ensure compliance with export control regulations associated with military-grade semiconductor components.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance is critical for mission success in space or high-altitude environments. Compare against standard commercial variants if radiation hardening is unnecessary, as this part offers enhanced durability at a higher specification tier. Verify thermal management requirements for the ceramic package.

Single Bipolar Transistors Part Context

This part belongs to the 2N2222A family of NPN transistors but is specifically engineered for harsh environments. Unlike standard commercial versions, it undergoes rigorous testing to withstand ionizing radiation effects, ensuring stable performance in satellite and defense applications where conventional semiconductors would fail.

Single Bipolar Transistors Replacement Considerations

JANSM2N2222AUB

Single Bipolar Transistors FAQ

What is the radiation hardness level of the JANSH2N2222AUA?

It is qualified to MIL-PRF-19500/255 Level JANSD, providing 10K Rads (Si) radiation hardness.

What type of package does this transistor use?

It uses a small outline ceramic surface-mount package designed for high reliability.

JANSH2N2222AUAJANSH2N2222AUA
$142.20
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