Diode Arrays JANTXV1N5712UBCA product image

JANTXV1N5712UBCA

$87.43
  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-

SKU:bb4af21721ec Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

JANTXV1N5712UBCA is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANTXV1N5712UBCA

  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io) (per Diode):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANTXV1N5712UBCA

JANTXV1N5712UBCA

Diode Arrays Overview

The JANTXV1N5712UBCA is a Schottky barrier diode manufactured by Microchip Technology. It features a ceramic surface-mount package (UB) and is qualified to the JANTXV level under MIL-PRF-19500/444 for high-reliability applications. The device has a maximum DC reverse voltage of 20 V and an average forward rectified current of 75 mA. Key electrical parameters include a forward voltage of 1 V at 35 mA, a reverse leakage current of 150 nA at 16 V, and a capacitance of 2 pF at 0 V and 1 MHz. It operates within a junction temperature range of -65°C to 150°C.

Diode Arrays Feature Summary

  • Ceramic surface-mount construction designed for high-reliability environments
  • Qualified to JANTXV military standards per MIL-PRF-19500/444
  • Low forward voltage drop characteristic typical of Schottky technology

Diode Arrays Applications

  • High-reliability aerospace systems
  • Military-grade electronic circuits
  • Spacecraft power management

Diode Arrays Procurement Notes

Verify that the specific suffix CA corresponds to the required common cathode configuration and packaging format. Confirm that the JANTXV qualification level meets the project's radiation hardness and reliability requirements. Ensure compliance with export control classifications such as EAR99 if applicable. Check for recent Product Change Notifications regarding assembly sites or labeling updates.

Diode Arrays Selection Notes

Select this component when a ruggedized, ceramic-packaged Schottky diode is required for critical missions. The JANTXV grade offers tighter parameter tolerances than JAN levels. Consider the UB package dimensions for PCB layout constraints. Verify thermal management needs given the 150°C maximum junction temperature limit.

Diode Arrays Part Context

This part belongs to the 1N5712 series of Schottky barrier diodes. It serves as the surface-mount equivalent of the axial-leaded 1N5712. The family includes various qualifications like JAN, JANTX, and JANS, with the UB package providing a compact alternative to DO-35 axial leads while maintaining military durability.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

JANTXV1N5712UBCAJANTXV1N5712UBCA
$87.43
Buy Now

Recent News