JANTXV2N5339

$10.36

Description：TRANS NPN 100V 5A TO39
Series：-

SKU:93952d7d90c6 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

JANTXV2N5339 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 100V 5A TO39. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N5339

Description：TRANS NPN 100V 5A TO39
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.2V @ 500mA, 5A
Current - Collector Cutoff (Max)：100µA
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 2A, 2V
Power - Max：1 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39 (TO-205AD)
Grade：Military
Qualification：MIL-PRF-19500/560

Single Bipolar Transistors datasheet and documents for JANTXV2N5339

JANTXV2N5339

Single Bipolar Transistors Overview

The JANTXV2N5339 is a military-grade silicon NPN single bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-39 metal can package for through-hole mounting. The device supports a maximum collector current of 5 A and a collector-emitter voltage of 100 V, with a power dissipation rating of 1 W. It operates within a temperature range of -65°C to +200°C. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 2 A and 2 V, a maximum collector cutoff current of 100 µA, and a collector-emitter saturation voltage of 1.2 V at 500 mA and 5 A.

Single Bipolar Transistors Feature Summary

Military-grade qualification compliant with MIL-PRF-19500/560 standards
High thermal stability enabling operation up to 200°C junction temperature
Robust high-current handling capability suitable for power switching applications

Single Bipolar Transistors Applications

Military aerospace electronic systems
High-reliability power switching circuits
Harsh environment amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm exact electrical binning and testing parameters. Ensure procurement channels provide valid traceability documentation required for military specifications. Confirm compliance with relevant export control classifications such as EAR99 before finalizing acquisition.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring verified military reliability and extended temperature performance. The TO-39 package facilitates robust mechanical mounting in industrial or aerospace chassis. Consider the 1 W power dissipation limit and ensure adequate heat sinking is integrated into the design to maintain safe operating temperatures under load.

Single Bipolar Transistors Part Context

This part belongs to the 2N5339 family of high-power NPN transistors produced by Microchip Technology. It serves as a ruggedized alternative to commercial variants, specifically engineered for defense and space applications where failure is not an option. The device represents a standard solution for high-voltage, high-current discrete switching requirements in critical infrastructure.