JANTXV2N6849

Single FETs, MOSFETs Overview

The JANTXV2N6849 is a P-channel enhancement-mode silicon MOSFET designed for power switching applications. It operates within a drain-source voltage range of 100 V and supports a continuous drain current of 6.5 A at case temperature. The device features a maximum gate-source voltage of ±20 V and a threshold voltage of 4 V at 250 µA. Key electrical parameters include a maximum gate charge of 34.8 nC at 10 V and an on-resistance of 320 mΩ at 10 V with 6.5 A flow. Power dissipation capabilities are rated at 800 mW in ambient conditions and 25 W at the case. The component utilizes a TO-205AF (TO-39) metal can package and complies with MIL-PRF-19500/564 standards.

Single FETs, MOSFETs Feature Summary

• Military-grade reliability compliant with MIL-PRF-19500/564 specifications
• High thermal performance capability with 25 W case power dissipation rating
• Robust radiation-hardened construction suitable for harsh environments

Single FETs, MOSFETs Applications

• Power switching circuits in military avionics systems
• Radiation-tolerant control logic interfaces
• High-reliability industrial power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix code to confirm the exact quality level, as the JAN family includes multiple grades such as JANTXV. Confirm that the procurement channel provides traceable documentation required for defense or aerospace contracts. Check for RoHS non-compliance status if environmental regulations apply to the final assembly. Ensure the supplier offers valid certification for the MIL-PRF-19500/564 standard upon delivery.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with high current handling and strict military qualification is required. The TO-205AF package necessitates through-hole mounting and specific heatsinking considerations due to its metal can construction. Evaluate the 320 mΩ on-resistance against system efficiency requirements at the target operating current. Consider the 150 °C junction temperature limit for thermal design calculations in enclosed spaces.

Single FETs, MOSFETs Part Context

This part belongs to the Microsemi (formerly Microchip) JAN series of field-effect transistors. The JAN designation indicates a specific quality level within the MIL-PRF-19500 framework. The JANTXV suffix denotes a higher reliability tier compared to standard JAN parts, often involving enhanced screening processes. This series is engineered for long-term stability in critical electronic systems where failure is not an option.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the P-channel configuration, 100 V rating, and TO-205AF footprint. Verify that any substitute meets the same MIL-PRF-19500/564 specification or equivalent military grade. Cross-reference gate charge and on-resistance values to ensure circuit timing and thermal performance remain unaffected.