KSC2335YTU

Single Bipolar Transistors Overview

The KSC2335YTU is an NPN epitaxial silicon transistor designed for high-speed, high-voltage switching applications. It features a collector-emitter voltage of 400 V and a continuous collector current rating of 7 A. The device supports a maximum collector dissipation of 40 W at a case temperature of 25°C. Key electrical characteristics include a collector-base voltage of 500 V and an emitter-base voltage of 7 V. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Engineered for high-speed switching operations in industrial environments
• Capable of handling high voltage levels up to 400 V collector-emitter
• Supports high current loads with a 7 A continuous collector current rating

Single Bipolar Transistors Applications

• Industrial power switching circuits
• High voltage inverter systems
• Motor control driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'YTU' against the manufacturer's official documentation to confirm packaging details, as datasheets may reference standard TO-220 configurations without specifying tape-and-reel variations. Confirm RoHS compliance status directly with the supplier or latest datasheet revision, as older Fairchild Semiconductor products may have varying environmental certifications depending on production date.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust high-voltage blocking capabilities combined with rapid switching speeds. Ensure thermal management solutions can sustain the 40 W dissipation rating at the expected operating case temperature. Verify that base drive currents are sufficient to achieve saturation within the specified turn-on and fall time parameters for the target application frequency.

Single Bipolar Transistors Part Context

This part belongs to the KSC2335 series of NPN power transistors originally manufactured by Fairchild Semiconductor. The series is characterized by its use of epitaxial silicon technology to achieve high breakdown voltages suitable for demanding power electronics. The TO-220 package provides a standardized mounting interface for heat sinking in medium-to-high power applications.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for equivalent high-voltage NPN transistors from other manufacturers. Ensure any substitute maintains comparable VCEO, IC ratings, and switching speed characteristics.