Single Bipolar Transistors KSC2688YSTU product image

KSC2688YSTU

  • Description:TRANS NPN 300V 0.2A TO-126-3
  • Series:-

SKU:330e5b7fe033 Category: Brand:

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KSC2688YSTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.2A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSC2688YSTU

  • Description:TRANS NPN 300V 0.2A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 10V
  • Power - Max:1.25 W
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3

Single Bipolar Transistors datasheet and documents for KSC2688YSTU

KSC2688YSTU

Single Bipolar Transistors Overview

The KSC2688YSTU is an NPN epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features a collector-emitter voltage of 300 V and a collector current rating of 200 mA. The device provides a DC current gain ranging from 40 to 250 depending on the classification bin. It operates with a junction temperature up to 150 °C and dissipates up to 1.25 W at ambient temperature or 10 W at case temperature. The component is housed in a TO-126 flange mount package.

Single Bipolar Transistors Feature Summary

  • High voltage capability suitable for demanding circuit applications
  • Wide range of DC current gain classifications for precise design matching
  • Robust thermal dissipation characteristics for stable operation

Single Bipolar Transistors Applications

  • Color TV chroma output stages
  • Video output circuits
  • General purpose switching applications requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as the part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm the specific hFE binning code required for your application, as gain varies significantly across R, O, Y, G, and B classifications. Ensure the TO-126 package dimensions match your PCB footprint requirements.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required. Consider the specific hFE bin needed for amplifier linearity or switching speed. Evaluate thermal management strategies based on whether the device will operate under ambient or direct case cooling conditions to ensure power ratings are not exceeded.

Single Bipolar Transistors Part Context

This transistor belongs to the general-purpose discrete semiconductor category. It is designed primarily for consumer electronics, specifically television sets. The TO-126 package allows for efficient heat transfer through the metal tab, distinguishing it from smaller plastic packages used for lower power signals.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 300V VCEO rating and TO-126 package. Verify that any replacement offers comparable hFE ranges and fT bandwidth. Check if the alternative is currently in production or marked obsolete.

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