LM2104DR

Gate Driver Overview

The LM2104DR is a half-bridge gate driver manufactured by Texas Instruments, designed to drive high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. It features a single PWM input (IN) and an active-low shutdown pin (SD). The device operates with a supply voltage range of 9V to 18V on GVDD. Key electrical parameters include a typical propagation delay of 115ns, a fixed internal dead time of 475ns, and peak source/sink currents of 0.5A/0.8A. It withstands a maximum BST voltage of 107V and handles negative transient voltages on the SH pin up to -19.5V. The component is housed in an 8-pin SOIC package.

Gate Driver Feature Summary

• Integrated cross-conduction prevention with a fixed internal dead time to prevent shoot-through in half-bridge applications.
• High-voltage tolerance capability with a 107V absolute maximum rating on the bootstrap pin and robust handling of negative transients on the switch node.
• Simplified control interface utilizing a single logic input for both high-side and low-side switching operations.
• Built-in undervoltage lockout protection on both the high-side and low-side power rails to ensure safe operation.

Gate Driver Applications

• Brushless DC (BLDC) motor drives
• Permanent Magnet Synchronous Motor (PMSM) systems
• Servo and stepper motor drivers
• Battery testing equipment

Gate Driver Procurement Notes

Verify that the specific order suffix matches the required packaging format, such as cut tape or reel, as indicated in the ordering information. Confirm that the component meets all relevant environmental compliance standards required for the target application. Ensure that the supply chain partner provides valid documentation regarding the authenticity of the Texas Instruments product. Check for any specific handling instructions related to electrostatic discharge protection during storage and assembly processes.

Gate Driver Selection Notes

Select the LM2104DR when a compact solution is needed for driving two N-channel MOSFETs with integrated protection against cross-conduction. The fixed dead time simplifies timing design compared to adjustable alternatives. Consider the 107V BST rating for applications requiring higher bus voltages within the half-bridge topology. The single-input architecture reduces control complexity. Evaluate the thermal performance within the SOIC-8 package against the expected switching frequency and load conditions.

Gate Driver Part Context

The LM2104DR belongs to the LM210X series of high-voltage half-bridge gate drivers from Texas Instruments. This series is engineered for power management and motor control applications where reliable switching of high-side and low-side devices is critical. The component shares functional similarities with other members of the family but offers specific parameter values tailored for general-purpose half-bridge implementations. It complements TI's portfolio of power stage solutions.

Gate Driver Replacement Considerations

Direct replacements must maintain compatibility with the 8-pin SOIC footprint and the single-input half-bridge functionality. Verify that substitute components offer equivalent peak output current capabilities and similar dead time characteristics to preserve system timing integrity. Ensure that the alternative device supports the same input logic levels and supply voltage ranges. Cross-reference absolute maximum ratings to guarantee safety margins are not compromised.