MA2C85800E

RF Diode Overview

The MA2C85800E is a silicon epitaxial planar band switching diode manufactured by Panasonic Electronic Components. It is designed for tuner applications and housed in an extra-small DO-34-A1 axial leaded package. Key electrical parameters include a maximum reverse voltage of 35 V, a forward current rating of 100 mA, and a typical diode capacitance of 1.2 pF at 6 V reverse bias and 1 MHz frequency. The device exhibits a low forward dynamic resistance of 0.98 Ω at 2 mA and 100 MHz, with a maximum forward voltage of 1.0 V at 100 mA.

RF Diode Feature Summary

• Extra-small DHD envelope allows insertion into 5 mm pitch holes
• Low voltage dependence of diode capacitance
• Low forward dynamic resistance optimized for high-frequency performance

RF Diode Applications

• Band switching circuits in tuners
• General electronic equipment
• Communications equipment

RF Diode Procurement Notes

Verify the current lifecycle status directly with Panasonic Industry, as this component may be discontinued or subject to product standard updates. Confirm that the latest specifications align with design requirements before finalizing procurement plans.

RF Diode Selection Notes

Select this component when a small axial package fits a 5 mm pitch layout and low capacitance variation is required. Ensure the operating ambient temperature remains within -25°C to +85°C and verify that the 35 V reverse voltage rating meets circuit constraints.

RF Diode Part Context

This part belongs to the MA2C858 series of band switching diodes. It utilizes a silicon epitaxial planar construction and is identified by yellow color bands on the casing. The component complies with the RoHS Directive (EU 2002/95/EC).

RF Diode Replacement Considerations

Consult official manufacturer resources for confirmed substitute part numbers. Verify compatibility regarding package dimensions, pinout orientation, and electrical ratings if considering alternative components.