MA4E20541-1141T

RF Diode Overview

The MA4E20541-1141T is a low barrier N-type silicon Schottky diode in the SOD-323 surface mount package. It features a maximum total capacitance of 0.30 pF and a minimum breakdown voltage of 3.0 V at 10 µA reverse current. The device supports an operating temperature range from -65°C to +125°C, with a maximum forward current of 20 mA and a reverse voltage rating of 3 V. It exhibits a maximum reverse leakage current of 100 nA at 1 V and 500 nA at 3 V.

RF Diode Feature Summary

• Designed for high-volume, low-cost detector and mixer applications
• Provides high detector sensitivity with a tangential signal sensitivity of -55 dBm TSS
• Features low 1/F noise characteristics

RF Diode Applications

• VSAT mixers
• DBS mixers
• RF tag identification systems
• Toll collection systems

RF Diode Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to confirm the exact package style and reel configuration. Ensure compliance with RoHS directives and lead-free manufacturing standards required by the project specifications before finalizing procurement orders.

RF Diode Selection Notes

Select this component for single-ended mixer and detector circuits requiring minimal parasitic capacitance. Evaluate the thermal derating requirements for RF incident power based on the maximum case temperature limits specified in the datasheet to ensure reliable operation under varying environmental conditions.

RF Diode Part Context

This part belongs to the MA4E2054 series of surface mount low barrier Schottky diodes manufactured by MACOM Technology Solutions. The series includes various configurations such as single elements, series pairs, and unconnected pairs housed in different plastic packages like SOT-23, SOT-323, and SC-79.

RF Diode Replacement Considerations

Consult the official datasheet for available equivalents within the MA4E2054 series that match the required wiring configuration and package style. Verify pinout compatibility and electrical parameter alignment before substituting with other manufacturers' components.

RF Diode FAQ

What is the maximum RF incident power handling capability?

The device can handle 75 mW of continuous wave RF incident power at 25°C, which must be linearly derated to 0 W at a 125°C case temperature.

Is the MA4E20541-1141T suitable for balanced mixer circuits?

No, this specific part number represents a single element Schottky diode intended for single-ended mixer and detector applications. Balanced mixer circuits typically require series pair configurations like the MA4E2054B1 or MA4E2054D1.

What is the typical mixer noise figure performance?

The typical mixer noise figure is 5.7 dB (SSB) when measured at a frequency of 9.375 GHz with a local oscillator power of 0 dBm.