MA4X72600L

Diode Arrays Overview

The MA4X726 is a silicon epitaxial planar Schottky Barrier Diode designed for super high-speed switching and small current rectification. It contains two isolated elements in one package, allowing high-density mounting. The device supports an average forward current of 200 mA per diode with a repetitive peak reverse voltage of 30 V. Key electrical characteristics include a typical forward voltage of 0.55 V at 200 mA, a maximum reverse current of 50 µA at 30 V, and a terminal capacitance of 30 pF at 1 MHz. The junction temperature rating reaches 150 °C.

Diode Arrays Feature Summary

• Contains two isolated Schottky barrier diodes within a single package to enable high-density circuit mounting.
• Engineered for super high-speed switching applications with negligible reverse recovery time.
• Features low forward voltage drop and low leakage current suitable for small current rectification.

Diode Arrays Applications

• Super high-speed switching circuits
• Small current rectification
• General electronic equipment

Diode Arrays Procurement Notes

Verify the specific lifecycle status on the manufacturer's website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm that the EIAJ SC-61 Mini4-G1 package dimensions match your PCB footprint requirements. Ensure static discharge precautions are observed during handling due to the sensitivity of the semiconductor structure.

Diode Arrays Selection Notes

Select this component when dual isolated Schottky diodes are required in a compact surface-mount form factor. It is appropriate for designs needing fast switching speeds and low forward voltage drops under small signal conditions. Verify that the 30 V reverse voltage rating meets the circuit's peak inverse voltage requirements and that the 200 mA average current capacity is sufficient for the load.

Diode Arrays Part Context

This part belongs to the Panasonic (formerly Matsushita) Schottky Barrier Diode family. It utilizes silicon epitaxial planar technology optimized for speed. The MA4X726 serves as a dual-element alternative to single diodes, effectively replacing two MA3X721 units in different directions within one footprint. It complies with the RoHS Directive.

Diode Arrays Replacement Considerations

The datasheet indicates that the MA4X726 contains two MA3X721 diodes. Designers requiring a single equivalent element may consider the MA3X721. No other direct substitute part numbers are explicitly confirmed in the provided documentation.

Diode Arrays FAQ

What is the internal configuration of the MA4X726?

It contains two isolated Schottky barrier diodes in one package, functioning similarly to two MA3X721 diodes arranged in different directions.

What is the maximum junction temperature for this device?

The maximum junction temperature (Tj) is rated at 150 °C.

How is the reverse recovery time measured?

The reverse recovery time (trr) is measured with IF = IR = 100 mA, Irr = 10 mA, and RL = 100 Ω, yielding a typical value of 3.0 ns.