MAPC-A1501-ABTR1

RF Amplifiers Overview

The MAPC-A1501-ABTR1 is a high-power GaN on Silicon HEMT amplifier manufactured by MACOM Technology Solutions. It operates within the 1.0 GHz to 1.1 GHz frequency range and delivers an output power of 1 kW (60 dBm). The device utilizes a surface-mount package designated as 2L-FLG, designed for robust thermal management in demanding RF applications.

RF Amplifiers Feature Summary

• High-power amplification utilizing Gallium Nitride on Silicon technology
• Optimized for broadband operation across the 1.0 to 1.1 GHz spectrum
• Surface-mount construction with integrated thermal grounding

RF Amplifiers Applications

• Military electronic warfare systems
• Aerospace communication payloads
• High-power radar transmitter modules

RF Amplifiers Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ABTR1 suffix matches the required reel packaging specifications. Ensure compatibility with MACOM's recommended biasing networks and thermal interface materials prior to integration into final assemblies.

RF Amplifiers Selection Notes

Select this component when high linearity and efficiency are critical at UHF frequencies. Evaluate thermal resistance requirements against system constraints. Consider the 2L-FLG footprint for PCB layout optimization. Validate performance metrics against application-specific signal integrity standards.

RF Amplifiers Part Context

This part belongs to MACOM’s portfolio of wide-bandgap semiconductor devices. It complements other high-power amplifiers in the MAPC series, offering scalable solutions for defense and aerospace sectors requiring reliable RF energy generation in compact form factors.

RF Amplifiers Replacement Considerations

Public confirmed substitute part numbers are not available.