MBR10H100CTH

Diode Arrays Overview

The MBR10H100CTH is a Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It utilizes silicon technology and features a dual anode common cathode configuration within a TO-220-3 package designed for through-hole mounting. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward current of 10 A. Key electrical parameters include a maximum forward voltage of 950 mV, a surge forward current rating of 120 A, and a maximum reverse current of 5 uA. It operates reliably across a temperature range from -65 °C to +175 °C.

Diode Arrays Feature Summary

• Dual anode common cathode configuration enables efficient center-tapped or full-wave rectification in low-voltage power circuits.
• Metal-silicon junction construction ensures majority carrier conduction for high efficiency and minimal power loss.
• Guardring structure provides enhanced ruggedness against overvoltage conditions and improves long-term reliability.

Diode Arrays Applications

• Low voltage, high frequency inverters
• Free-wheeling diodes in switching power supplies
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'H' against official datasheets to confirm it denotes the tube packaging variant rather than a different electrical specification. Confirm RoHS compliance status and AEC-Q101 qualification requirements with the manufacturer before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring a 100 V blocking voltage and 10 A continuous current handling capability. The TO-220-3 package is suitable for designs needing robust thermal dissipation via heatsinking. Ensure the circuit design accommodates the specified 120 A surge current rating during startup or fault conditions.

Diode Arrays Part Context

This part belongs to the MBR10H series of high-voltage Schottky rectifiers from Taiwan Semiconductor. The series is engineered for general-purpose rectification where low forward voltage drop and high switching speed are critical. It serves as a direct replacement for legacy components in similar voltage and current classes.

Diode Arrays Replacement Considerations

Cross-reference with Vishay MBR10H100HE3/45 for single-channel equivalents or onsemi MBRB20H100CTT4G for surface-mount alternatives. Verify pinout compatibility and thermal resistance values when substituting into existing board layouts.

Diode Arrays FAQ

Is the MBR10H100CTH qualified for automotive applications?

Yes, the MBR10H100CTH is AEC-Q101 qualified, making it suitable for automotive electronics environments.

What is the maximum operating junction temperature?

The maximum operating junction temperature is rated at +175 °C.