Diode Arrays MBR12030CTR product image

MBR12030CTR

$48.80
  • Description:DIODE MOD SCHOTT 30V 120A 2TOWER
  • Series:-

SKU:eaff7deeea6d Category: Brand:

  
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MBR12030CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12030CTR

  • Description:DIODE MOD SCHOTT 30V 120A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):120A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 60 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR12030CTR

MBR12030CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR12030CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 30 V and an average forward current rating of 120 A per package. The device exhibits a maximum forward voltage of 0.70 V at 60 A and a thermal resistance of 0.80 °C/W per leg. It supports a junction temperature range from -55 °C to +150 °C and offers a peak forward surge current capability of 800 A.

Diode Arrays Feature Summary

  • High surge current capability for robust operation under transient conditions
  • Electrically isolated base plate within the Twin Tower package design
  • Not sensitive to electrostatic discharge (ESD)
  • Common anode configuration with two internal elements

Diode Arrays Applications

  • Power supply rectification circuits
  • DC-DC converter freewheeling applications
  • Inverter output rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official GeneSiC documentation to confirm terminal orientation, as datasheets indicate 'R' devices have reversed leads. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the procurement channel sources authentic components to guarantee electrical parameters match the published specifications.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and high efficiency in power conversion systems. The 30 V rating suits low-voltage DC bus applications. Evaluate thermal management requirements based on the 0.80 °C/W junction-to-case resistance. Verify that the 120 A average current rating aligns with the system's continuous load demands and ambient operating temperatures.

Diode Arrays Part Context

This part belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 20 V to 100 V reverse voltage ratings. These modules are designed for high-performance power electronics, utilizing silicon technology to deliver reliable rectification in compact industrial and commercial power supplies.

Diode Arrays Replacement Considerations

Direct substitutes include other MBR120 series variants such as MBR12020CTR or MBR12040CTR, provided the voltage and current ratings meet the circuit requirements. Cross-brand replacements must match the Twin Tower package dimensions, pinout configuration, and thermal characteristics to ensure compatibility.

MBR12030CTRMBR12030CTR
$48.80
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